JPS55134175A - Microwave plasma etching unit - Google Patents

Microwave plasma etching unit

Info

Publication number
JPS55134175A
JPS55134175A JP4110979A JP4110979A JPS55134175A JP S55134175 A JPS55134175 A JP S55134175A JP 4110979 A JP4110979 A JP 4110979A JP 4110979 A JP4110979 A JP 4110979A JP S55134175 A JPS55134175 A JP S55134175A
Authority
JP
Japan
Prior art keywords
fan
plasma
region
microwave
sample surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4110979A
Other languages
English (en)
Other versions
JPS5617433B2 (ja
Inventor
Keizo Suzuki
Sadayuki Okudaira
Shigeru Nishimatsu
Ichiro Shikamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4110979A priority Critical patent/JPS55134175A/ja
Priority to DE8080101575T priority patent/DE3064084D1/de
Priority to EP80101575A priority patent/EP0017143B1/en
Priority to US06/138,082 priority patent/US4430138A/en
Publication of JPS55134175A publication Critical patent/JPS55134175A/ja
Publication of JPS5617433B2 publication Critical patent/JPS5617433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP4110979A 1979-04-06 1979-04-06 Microwave plasma etching unit Granted JPS55134175A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4110979A JPS55134175A (en) 1979-04-06 1979-04-06 Microwave plasma etching unit
DE8080101575T DE3064084D1 (en) 1979-04-06 1980-03-25 Microwave plasma etching apparatus
EP80101575A EP0017143B1 (en) 1979-04-06 1980-03-25 Microwave plasma etching apparatus
US06/138,082 US4430138A (en) 1979-04-06 1980-04-07 Microwave plasma etching apparatus having fan-shaped discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4110979A JPS55134175A (en) 1979-04-06 1979-04-06 Microwave plasma etching unit

Publications (2)

Publication Number Publication Date
JPS55134175A true JPS55134175A (en) 1980-10-18
JPS5617433B2 JPS5617433B2 (ja) 1981-04-22

Family

ID=12599299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4110979A Granted JPS55134175A (en) 1979-04-06 1979-04-06 Microwave plasma etching unit

Country Status (4)

Country Link
US (1) US4430138A (ja)
EP (1) EP0017143B1 (ja)
JP (1) JPS55134175A (ja)
DE (1) DE3064084D1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229841A (ja) * 1986-03-28 1987-10-08 Anelva Corp 真空処理装置
JPH0724239B2 (ja) * 1985-05-03 1995-03-15 ジ・オ−ストラリアン・ナシヨナル・ユニバ−シテイ 大容積の磁気プラズマを発生する方法と装置
JPH08172081A (ja) * 1995-08-28 1996-07-02 Hitachi Ltd プラズマ表面処理装置
JPH11502049A (ja) * 1995-01-13 1999-02-16 ザクリイトエ アクトシオネルノエ オブスケストボ ナウクノ−プロイズボドストベナザ フイルマ ″アズ″ プラズマジェットでウェーハを処理する装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
FR2534040B1 (fr) * 1982-10-04 1988-05-13 Commissariat Energie Atomique Reacteur et procede associe pour traitement de stabilisation de resines utilisees notamment en gravure seche
DE3244391A1 (de) * 1982-12-01 1984-06-07 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zur beschichtung von substraten durch plasmapolymerisation
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
US4810935A (en) * 1985-05-03 1989-03-07 The Australian National University Method and apparatus for producing large volume magnetoplasmas
DE3684661D1 (de) * 1985-06-04 1992-05-07 Dow Chemical Co Wiederaufladbare sekundaerbatterie.
US4728863A (en) * 1985-12-04 1988-03-01 Wertheimer Michael R Apparatus and method for plasma treatment of substrates
DE3729347A1 (de) * 1986-09-05 1988-03-17 Mitsubishi Electric Corp Plasmaprozessor
JPH0689456B2 (ja) * 1986-10-01 1994-11-09 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
EP0264913B1 (en) * 1986-10-20 1994-06-22 Hitachi, Ltd. Plasma processing apparatus
US4947085A (en) * 1987-03-27 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
JP2618001B2 (ja) * 1988-07-13 1997-06-11 三菱電機株式会社 プラズマ反応装置
KR900013579A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 마이크로파 플라즈마 처리방법 및 장치
FR2647293B1 (fr) * 1989-05-18 1996-06-28 Defitech Sa Reacteur a plasma perfectionne muni de moyens de couplage d'ondes electromagnetiques
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
DE19532100A1 (de) * 1995-08-30 1997-03-06 Leybold Ag Vorrichtung zur Plasmabehandlung von Substraten
US20020011215A1 (en) 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
RU2657899C1 (ru) * 2017-02-07 2018-06-18 Закрытое акционерное общество "Руднев-Шиляев" Способ обработки полиимидной пленки в факеле неравновесной гетерогенной низкотемпературной свч- плазмы при атмосферном давлении

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010787A (ja) * 1973-06-05 1975-02-04

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3993909A (en) * 1973-03-16 1976-11-23 U.S. Philips Corporation Substrate holder for etching thin films
DE2716592C3 (de) * 1976-04-15 1979-11-08 Hitachi, Ltd., Tokio Plasma-Ätzvorrichtung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010787A (ja) * 1973-06-05 1975-02-04

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724239B2 (ja) * 1985-05-03 1995-03-15 ジ・オ−ストラリアン・ナシヨナル・ユニバ−シテイ 大容積の磁気プラズマを発生する方法と装置
JPS62229841A (ja) * 1986-03-28 1987-10-08 Anelva Corp 真空処理装置
JPH11502049A (ja) * 1995-01-13 1999-02-16 ザクリイトエ アクトシオネルノエ オブスケストボ ナウクノ−プロイズボドストベナザ フイルマ ″アズ″ プラズマジェットでウェーハを処理する装置
US6845733B1 (en) 1995-01-13 2005-01-25 Samsung Electronics Co., Ltd. Device for treating planar elements with a plasma jet
JPH08172081A (ja) * 1995-08-28 1996-07-02 Hitachi Ltd プラズマ表面処理装置

Also Published As

Publication number Publication date
EP0017143B1 (en) 1983-07-13
EP0017143A1 (en) 1980-10-15
JPS5617433B2 (ja) 1981-04-22
DE3064084D1 (en) 1983-08-18
US4430138A (en) 1984-02-07

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