JPS55132590A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55132590A
JPS55132590A JP4067379A JP4067379A JPS55132590A JP S55132590 A JPS55132590 A JP S55132590A JP 4067379 A JP4067379 A JP 4067379A JP 4067379 A JP4067379 A JP 4067379A JP S55132590 A JPS55132590 A JP S55132590A
Authority
JP
Japan
Prior art keywords
current
write
voltage
iwl
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4067379A
Other languages
Japanese (ja)
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4067379A priority Critical patent/JPS55132590A/en
Publication of JPS55132590A publication Critical patent/JPS55132590A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To enable stable write-in even with greater write-in current externally, by giving the detection function in the switching circuit of write-in current for current limit. CONSTITUTION:The transistor Q23 is the transistor directly controlling the write- in current IW, and when the emitter potential of Q21 is higher, Q22, Q23 are ON to flow the current IW. To realize the constant current, the current sensing resistor RD is inserted between the emitter of Q23 and the lowest potential point and the constant voltage element A is inserted between the base and the lowest potential point. The limit value IWL of the write-in current in this case is IWL=(VA-VF)/ RD. VA is the voltage across the element A and VF is the base to emitter voltage VBE of Q23 when IW=IWL. The point to connect the element A is the point where the base current of Q23 is reduced with the increase in the voltage across RD. Thus, write-in operation can stably be made even in the semiconductor device formed with the memory element small in the write-in current.
JP4067379A 1979-04-04 1979-04-04 Semiconductor device Pending JPS55132590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4067379A JPS55132590A (en) 1979-04-04 1979-04-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4067379A JPS55132590A (en) 1979-04-04 1979-04-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55132590A true JPS55132590A (en) 1980-10-15

Family

ID=12587038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4067379A Pending JPS55132590A (en) 1979-04-04 1979-04-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55132590A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070597A (en) * 1983-09-28 1985-04-22 Toshiba Corp Non-volatile semiconductor storage device
JPS6214396A (en) * 1985-07-12 1987-01-22 Nec Corp Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248777A (en) * 1975-10-15 1977-04-19 Tokico Ltd Oil pressure shock absorber

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248777A (en) * 1975-10-15 1977-04-19 Tokico Ltd Oil pressure shock absorber

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070597A (en) * 1983-09-28 1985-04-22 Toshiba Corp Non-volatile semiconductor storage device
JPH0519239B2 (en) * 1983-09-28 1993-03-16 Tokyo Shibaura Electric Co
JPS6214396A (en) * 1985-07-12 1987-01-22 Nec Corp Semiconductor memory device

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