JPS55125688A - Hall effect device - Google Patents

Hall effect device

Info

Publication number
JPS55125688A
JPS55125688A JP3397179A JP3397179A JPS55125688A JP S55125688 A JPS55125688 A JP S55125688A JP 3397179 A JP3397179 A JP 3397179A JP 3397179 A JP3397179 A JP 3397179A JP S55125688 A JPS55125688 A JP S55125688A
Authority
JP
Japan
Prior art keywords
hall effect
magnetic field
elements
voltages
effect device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3397179A
Other languages
Japanese (ja)
Inventor
Fumio Sugiyama
Haruo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3397179A priority Critical patent/JPS55125688A/en
Publication of JPS55125688A publication Critical patent/JPS55125688A/en
Pending legal-status Critical Current

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  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To improve the detecting characteristics of a Hall effect device by applying reverse magnetic fields to be measured to a pair of Hall effect elements reversely disposed to each other and in parallel on the magnetic field surfaces thereof and adding the Hall effect voltages produced at the respective elements to cancel the error components due to the disturbing magnetic field.
CONSTITUTION: A Hall effect device is composed of the first and second Hall effect elements 11, 12, respective current terminals 11a, 11b, 12a, 12b are connected to a power supply 13, and currents I1, I2 are passed therethrough. At this time the elements 11, 12 are disposed on magnetic field surfaces in parallel with each other, and a current lead wire 14 as an article to be measured is bent in U shape and arranged between the ends of iron cores 15, 16 provided in wound state in opposite positions. Thus, when a current is passed through the lead wires 14, reverse magnetic field H is applied to the elements 11, 12 via the cores 15, 16, and reverse Hall voltages V1, V2 produced thereat are presented at the voltage terminals 11c, 11d, 12c, 12d. Thereafter, these voltages are applied through resistors 21, 22 to an amplifier 23 to provide detected magnetic field having no error.
COPYRIGHT: (C)1980,JPO&Japio
JP3397179A 1979-03-23 1979-03-23 Hall effect device Pending JPS55125688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3397179A JPS55125688A (en) 1979-03-23 1979-03-23 Hall effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3397179A JPS55125688A (en) 1979-03-23 1979-03-23 Hall effect device

Publications (1)

Publication Number Publication Date
JPS55125688A true JPS55125688A (en) 1980-09-27

Family

ID=12401364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3397179A Pending JPS55125688A (en) 1979-03-23 1979-03-23 Hall effect device

Country Status (1)

Country Link
JP (1) JPS55125688A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154263A (en) * 1982-03-09 1983-09-13 Seiko Instr & Electronics Ltd Hall integrated circuit
US4692702A (en) * 1984-09-27 1987-09-08 Nukem Gmbh Device with two generators for measuring the gradients of magnetic fields
US4857842A (en) * 1987-06-03 1989-08-15 Kineret Engineering Temperature compensated hall effect position sensor
FR2747497A1 (en) * 1996-04-12 1997-10-17 Silmag Sa Magnetic head for data recording
EP0807925A1 (en) * 1996-05-15 1997-11-19 Silmag Magnetic head with semiconductor field detector situated beneath the gap
KR101197947B1 (en) 2010-11-04 2012-11-05 삼성전기주식회사 Hall device module equipped with double hall devices

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154263A (en) * 1982-03-09 1983-09-13 Seiko Instr & Electronics Ltd Hall integrated circuit
US4692702A (en) * 1984-09-27 1987-09-08 Nukem Gmbh Device with two generators for measuring the gradients of magnetic fields
US4857842A (en) * 1987-06-03 1989-08-15 Kineret Engineering Temperature compensated hall effect position sensor
FR2747497A1 (en) * 1996-04-12 1997-10-17 Silmag Sa Magnetic head for data recording
EP0807925A1 (en) * 1996-05-15 1997-11-19 Silmag Magnetic head with semiconductor field detector situated beneath the gap
FR2748843A1 (en) * 1996-05-15 1997-11-21 Silmag Sa MAGNETIC HEAD WITH SEMICONDUCTOR FIELD SENSOR PLACED UNDER THE INTERFER
KR101197947B1 (en) 2010-11-04 2012-11-05 삼성전기주식회사 Hall device module equipped with double hall devices

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