JPS5512408A - Breakdown voltage testing method of insulator - Google Patents

Breakdown voltage testing method of insulator

Info

Publication number
JPS5512408A
JPS5512408A JP8402978A JP8402978A JPS5512408A JP S5512408 A JPS5512408 A JP S5512408A JP 8402978 A JP8402978 A JP 8402978A JP 8402978 A JP8402978 A JP 8402978A JP S5512408 A JPS5512408 A JP S5512408A
Authority
JP
Japan
Prior art keywords
film
breakdown voltage
sio
insulator
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8402978A
Other languages
Japanese (ja)
Other versions
JPS6046665B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8402978A priority Critical patent/JPS6046665B2/en
Publication of JPS5512408A publication Critical patent/JPS5512408A/en
Publication of JPS6046665B2 publication Critical patent/JPS6046665B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Relating To Insulation (AREA)

Abstract

PURPOSE: To make it possible to meter the true value of the breakdown voltage of an insulating film by charging an insulator whit positive or negative charges due to the corona discharge and by metering the charge potential with the use of a surface potentiometer.
CONSTITUTION: In case the breakdown voltage of a film 2 of SiO2 which is formed on a P type semiconductor wafer of Si, the Si wafer 1 formed with the film 2 is placed on a test table and is stored with positive (or negative) charges due to the corona discharge. The charges stored on the insulating film can be manually or automatically measured with the use of a surface potentiometer. Thus, the charge storages are repeated, and the storages are repeated on the film of SiO2 so that the maximum potential to be stored on the film of SiO2 becomes the potential value, which can be endured at the most under the condition with no current flowing through the insulating film, i.e., the direct value of the breakdown voltage.
COPYRIGHT: (C)1980,JPO&Japio
JP8402978A 1978-07-12 1978-07-12 Insulator breakdown voltage testing method Expired JPS6046665B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8402978A JPS6046665B2 (en) 1978-07-12 1978-07-12 Insulator breakdown voltage testing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8402978A JPS6046665B2 (en) 1978-07-12 1978-07-12 Insulator breakdown voltage testing method

Publications (2)

Publication Number Publication Date
JPS5512408A true JPS5512408A (en) 1980-01-29
JPS6046665B2 JPS6046665B2 (en) 1985-10-17

Family

ID=13819107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8402978A Expired JPS6046665B2 (en) 1978-07-12 1978-07-12 Insulator breakdown voltage testing method

Country Status (1)

Country Link
JP (1) JPS6046665B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296370A (en) * 1979-10-11 1981-10-20 Rca Corporation Method of detecting a thin insulating film over a conductor
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US5354735A (en) * 1992-07-30 1994-10-11 Firmenich Sa Use of a cyclopentadecenone as perfuming ingredient
US5498974A (en) * 1994-12-30 1996-03-12 International Business Machines Corporation Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus
JP2007263875A (en) * 2006-03-29 2007-10-11 Ngk Insulators Ltd Plasma generation electrode inspection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296370A (en) * 1979-10-11 1981-10-20 Rca Corporation Method of detecting a thin insulating film over a conductor
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US5354735A (en) * 1992-07-30 1994-10-11 Firmenich Sa Use of a cyclopentadecenone as perfuming ingredient
US5498974A (en) * 1994-12-30 1996-03-12 International Business Machines Corporation Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus
JP2007263875A (en) * 2006-03-29 2007-10-11 Ngk Insulators Ltd Plasma generation electrode inspection device
JP4699928B2 (en) * 2006-03-29 2011-06-15 日本碍子株式会社 Plasma generation electrode inspection device

Also Published As

Publication number Publication date
JPS6046665B2 (en) 1985-10-17

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