JPS551175A - Vapor phase epitaxy apparatus for semiconductor - Google Patents
Vapor phase epitaxy apparatus for semiconductorInfo
- Publication number
- JPS551175A JPS551175A JP3562379A JP3562379A JPS551175A JP S551175 A JPS551175 A JP S551175A JP 3562379 A JP3562379 A JP 3562379A JP 3562379 A JP3562379 A JP 3562379A JP S551175 A JPS551175 A JP S551175A
- Authority
- JP
- Japan
- Prior art keywords
- supply system
- gas
- gas supply
- reaction gas
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To accomplish vapor phase epitaxy with a good reproductivity at a high accuracy through adjustment of various gases in the reaction gas supply system monitoring the analysis value of the reaction gas introduced into a gas analyzer after partially withdrawn from near the substrate wafer in the reactor during the growth.
CONSTITUTION: This apparatus is provided with a main carrier supply system having respective flow regulators 48, 50 and 53 and a reaction gas supply system including a material gas supply system and a doping gas supply system. In addition, a reactor 41 is connected to the reaction gas supply system. A part of the reaction gas is directly withdrawn from near a substrate wafer 43 for vapor phase epitaxy in the reactor 41 through gas discharge nozzles 54 and 55 and introduced into analyzers 58 and 59 An analysis is made concerning the concentration of either or both of the material gas and impurity doping gas in the gas. The results of the analysis are fed to respective flow regulators 50 and 53 through drive control circuits 66 and 67 being monitored with discriminators 64 and 65 so as to perform adjustment of the flow.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3562379A JPS551175A (en) | 1979-03-28 | 1979-03-28 | Vapor phase epitaxy apparatus for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3562379A JPS551175A (en) | 1979-03-28 | 1979-03-28 | Vapor phase epitaxy apparatus for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS551175A true JPS551175A (en) | 1980-01-07 |
Family
ID=12446981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3562379A Pending JPS551175A (en) | 1979-03-28 | 1979-03-28 | Vapor phase epitaxy apparatus for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS551175A (en) |
-
1979
- 1979-03-28 JP JP3562379A patent/JPS551175A/en active Pending
Non-Patent Citations (3)
Title |
---|
JOURNAL OF THE ELECTROCHEMICAL SOCIETY#V118#N9 * |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY#V119#N6 * |
SOLID STATE TECHNOLOGY=1970 * |
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