JPS551175A - Vapor phase epitaxy apparatus for semiconductor - Google Patents

Vapor phase epitaxy apparatus for semiconductor

Info

Publication number
JPS551175A
JPS551175A JP3562379A JP3562379A JPS551175A JP S551175 A JPS551175 A JP S551175A JP 3562379 A JP3562379 A JP 3562379A JP 3562379 A JP3562379 A JP 3562379A JP S551175 A JPS551175 A JP S551175A
Authority
JP
Japan
Prior art keywords
supply system
gas
gas supply
reaction gas
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3562379A
Other languages
Japanese (ja)
Inventor
Takaya Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3562379A priority Critical patent/JPS551175A/en
Publication of JPS551175A publication Critical patent/JPS551175A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To accomplish vapor phase epitaxy with a good reproductivity at a high accuracy through adjustment of various gases in the reaction gas supply system monitoring the analysis value of the reaction gas introduced into a gas analyzer after partially withdrawn from near the substrate wafer in the reactor during the growth.
CONSTITUTION: This apparatus is provided with a main carrier supply system having respective flow regulators 48, 50 and 53 and a reaction gas supply system including a material gas supply system and a doping gas supply system. In addition, a reactor 41 is connected to the reaction gas supply system. A part of the reaction gas is directly withdrawn from near a substrate wafer 43 for vapor phase epitaxy in the reactor 41 through gas discharge nozzles 54 and 55 and introduced into analyzers 58 and 59 An analysis is made concerning the concentration of either or both of the material gas and impurity doping gas in the gas. The results of the analysis are fed to respective flow regulators 50 and 53 through drive control circuits 66 and 67 being monitored with discriminators 64 and 65 so as to perform adjustment of the flow.
COPYRIGHT: (C)1980,JPO&Japio
JP3562379A 1979-03-28 1979-03-28 Vapor phase epitaxy apparatus for semiconductor Pending JPS551175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3562379A JPS551175A (en) 1979-03-28 1979-03-28 Vapor phase epitaxy apparatus for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3562379A JPS551175A (en) 1979-03-28 1979-03-28 Vapor phase epitaxy apparatus for semiconductor

Publications (1)

Publication Number Publication Date
JPS551175A true JPS551175A (en) 1980-01-07

Family

ID=12446981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3562379A Pending JPS551175A (en) 1979-03-28 1979-03-28 Vapor phase epitaxy apparatus for semiconductor

Country Status (1)

Country Link
JP (1) JPS551175A (en)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY#V118#N9 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY#V119#N6 *
SOLID STATE TECHNOLOGY=1970 *

Similar Documents

Publication Publication Date Title
JPS55158623A (en) Method of controlling semiconductor vapor phase growth
EP0139134A3 (en) Deposition and diffusion source control means and method
JPS551175A (en) Vapor phase epitaxy apparatus for semiconductor
JPS55117229A (en) Growing method of semiconductor at gas phase
JPS54144867A (en) Gas phase growth method of semiconductor
JPS5694750A (en) Heating treatment device
JPS5320763A (en) Crystal growing method and apparatus
JPS567437A (en) Heat treating method for semiconductor wafer
JPH04233725A (en) Manufacture of dilute gas
JPS5649520A (en) Vapor growth of compound semiconductor
JPS55128819A (en) Method of growing semiconductor at gas phase
JPS5756400A (en) Continuous vapor-phase epitaxial growing furnace
JPS54136174A (en) Automatic semiconductor thermal processor
TEMPS et al. Research into product structure of oxygen with ethylene reactions
JPS5493357A (en) Growing method of polycrystal silicon
JPS5493358A (en) Boat for growing for liquid phase epitaxial
JPS5737823A (en) Vapor phase growth device
JPS5673695A (en) Doping method and vapor phase growing apparatus
JPS5578525A (en) Vapor phase epitaxial growth
JPS5591815A (en) Silicon epitaxial growth
JPS54158166A (en) Vapor growth method for compound semiconductor crystal
JPS5456358A (en) Vapor phase growth method of compound semiconductor crystal
JPS5357752A (en) Impurity deposaition method to semiconductor
JPS57162326A (en) Vapor phase growing device
JPS57205400A (en) Vapor phase growing method for gallium arsenide