JPS55113381A - Semiconductor displacement transducer - Google Patents
Semiconductor displacement transducerInfo
- Publication number
- JPS55113381A JPS55113381A JP1966279A JP1966279A JPS55113381A JP S55113381 A JPS55113381 A JP S55113381A JP 1966279 A JP1966279 A JP 1966279A JP 1966279 A JP1966279 A JP 1966279A JP S55113381 A JPS55113381 A JP S55113381A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- main surface
- film
- strain
- senser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To completely retain the adherence and electric insulation between a strain senser and a strain transfer member in a semiconductor displacement transducer by forming an insulated oxide film formed on one main surface of a semiconductor substrate in a laminated structure of a plurality of discontinuous insulated oxide films of crystal configuration.
CONSTITUTION: A striped p-type resistance region 113, a surface stabilizing SiO2 film 114 of the region 113, and a conductive evaporated metal film wire 115 are formed on one main surface 112 of an n-type silicon monocrystal 111, and SiO2 films 117∼119 are laminated on the other main surface thereof. Since the SiO2 film is divided into three layers to form discontinuous crystal configuration, the disorder of the crystal having fine grains formed at the initial period of evaporation is coated with SiO2 due to sputtering process after twice, thereby avoiding the short-circuit between the mother body of a strain gauge chip and evaporated metal as a solder layer for preferable insulation. Thus, the strength in the adherence between the senser and the member can also be secured in the transducer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1966279A JPS55113381A (en) | 1979-02-23 | 1979-02-23 | Semiconductor displacement transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1966279A JPS55113381A (en) | 1979-02-23 | 1979-02-23 | Semiconductor displacement transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113381A true JPS55113381A (en) | 1980-09-01 |
Family
ID=12005449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1966279A Pending JPS55113381A (en) | 1979-02-23 | 1979-02-23 | Semiconductor displacement transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113381A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124877A (en) * | 1983-12-08 | 1985-07-03 | Sumitomo Electric Ind Ltd | Strain sensor |
JPS60124878A (en) * | 1983-12-08 | 1985-07-03 | Sumitomo Electric Ind Ltd | Strain sensor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345878B2 (en) * | 1973-04-24 | 1978-12-09 |
-
1979
- 1979-02-23 JP JP1966279A patent/JPS55113381A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345878B2 (en) * | 1973-04-24 | 1978-12-09 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124877A (en) * | 1983-12-08 | 1985-07-03 | Sumitomo Electric Ind Ltd | Strain sensor |
JPS60124878A (en) * | 1983-12-08 | 1985-07-03 | Sumitomo Electric Ind Ltd | Strain sensor |
JPH0447762B2 (en) * | 1983-12-08 | 1992-08-04 | Sumitomo Electric Industries | |
JPH0447763B2 (en) * | 1983-12-08 | 1992-08-04 | Sumitomo Electric Industries |
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