JPS55113381A - Semiconductor displacement transducer - Google Patents

Semiconductor displacement transducer

Info

Publication number
JPS55113381A
JPS55113381A JP1966279A JP1966279A JPS55113381A JP S55113381 A JPS55113381 A JP S55113381A JP 1966279 A JP1966279 A JP 1966279A JP 1966279 A JP1966279 A JP 1966279A JP S55113381 A JPS55113381 A JP S55113381A
Authority
JP
Japan
Prior art keywords
sio
main surface
film
strain
senser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1966279A
Other languages
Japanese (ja)
Inventor
Yasutoshi Kurihara
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1966279A priority Critical patent/JPS55113381A/en
Publication of JPS55113381A publication Critical patent/JPS55113381A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To completely retain the adherence and electric insulation between a strain senser and a strain transfer member in a semiconductor displacement transducer by forming an insulated oxide film formed on one main surface of a semiconductor substrate in a laminated structure of a plurality of discontinuous insulated oxide films of crystal configuration.
CONSTITUTION: A striped p-type resistance region 113, a surface stabilizing SiO2 film 114 of the region 113, and a conductive evaporated metal film wire 115 are formed on one main surface 112 of an n-type silicon monocrystal 111, and SiO2 films 117∼119 are laminated on the other main surface thereof. Since the SiO2 film is divided into three layers to form discontinuous crystal configuration, the disorder of the crystal having fine grains formed at the initial period of evaporation is coated with SiO2 due to sputtering process after twice, thereby avoiding the short-circuit between the mother body of a strain gauge chip and evaporated metal as a solder layer for preferable insulation. Thus, the strength in the adherence between the senser and the member can also be secured in the transducer.
COPYRIGHT: (C)1980,JPO&Japio
JP1966279A 1979-02-23 1979-02-23 Semiconductor displacement transducer Pending JPS55113381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1966279A JPS55113381A (en) 1979-02-23 1979-02-23 Semiconductor displacement transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1966279A JPS55113381A (en) 1979-02-23 1979-02-23 Semiconductor displacement transducer

Publications (1)

Publication Number Publication Date
JPS55113381A true JPS55113381A (en) 1980-09-01

Family

ID=12005449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1966279A Pending JPS55113381A (en) 1979-02-23 1979-02-23 Semiconductor displacement transducer

Country Status (1)

Country Link
JP (1) JPS55113381A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124877A (en) * 1983-12-08 1985-07-03 Sumitomo Electric Ind Ltd Strain sensor
JPS60124878A (en) * 1983-12-08 1985-07-03 Sumitomo Electric Ind Ltd Strain sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345878B2 (en) * 1973-04-24 1978-12-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345878B2 (en) * 1973-04-24 1978-12-09

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124877A (en) * 1983-12-08 1985-07-03 Sumitomo Electric Ind Ltd Strain sensor
JPS60124878A (en) * 1983-12-08 1985-07-03 Sumitomo Electric Ind Ltd Strain sensor
JPH0447762B2 (en) * 1983-12-08 1992-08-04 Sumitomo Electric Industries
JPH0447763B2 (en) * 1983-12-08 1992-08-04 Sumitomo Electric Industries

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