JPS55111127A - Method for forming solder bump - Google Patents
Method for forming solder bumpInfo
- Publication number
- JPS55111127A JPS55111127A JP1820979A JP1820979A JPS55111127A JP S55111127 A JPS55111127 A JP S55111127A JP 1820979 A JP1820979 A JP 1820979A JP 1820979 A JP1820979 A JP 1820979A JP S55111127 A JPS55111127 A JP S55111127A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- layer
- solder
- photoresist
- damages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE: To form a solder bump which is characterized by the features that a photoresist is readily removed and damages are not remained in characteristic checking, by melting a solder-plated layer at a specified temperature and curing it, thereafter melting the solder layer at a higher temperature and curing it again.
CONSTITUTION: A surface-protecting film 4 is further deposited on an Al wiring 3 which contacts with Si and the window portion of a surface-protecting film 2 on a Si substrate 1, and an underlying metal layer 5 is formed at said window portion. Thereafter, a Pb layer 6 and an Sn layer 7 are stacked by electric plating with a photoresist being a mask. Then, the plated layers 6 and 7 are melted at a temperature less than 320°C, and the photoresist is removed after said layers have been cooled and cured. At this stage, the characteristic check of the element is performed. Thereafter, the temperature is increased again, and the soldering layers are melted again at a temperature higher than the previous melting temperature (e.g., 330W 350°C for the solder comprising 90% of Pb and 10% of Sn), thereby a semi-circular solder bump 8 is obtained. In this constitution, even though damages are given in the characteristic check, the remnants of the damages are not remained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1820979A JPS55111127A (en) | 1979-02-19 | 1979-02-19 | Method for forming solder bump |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1820979A JPS55111127A (en) | 1979-02-19 | 1979-02-19 | Method for forming solder bump |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55111127A true JPS55111127A (en) | 1980-08-27 |
Family
ID=11965253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1820979A Pending JPS55111127A (en) | 1979-02-19 | 1979-02-19 | Method for forming solder bump |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55111127A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4950623A (en) * | 1988-08-02 | 1990-08-21 | Microelectronics Center Of North Carolina | Method of building solder bumps |
US5071787A (en) * | 1989-03-14 | 1991-12-10 | Kabushiki Kaisha Toshiba | Semiconductor device utilizing a face-down bonding and a method for manufacturing the same |
US5289631A (en) * | 1992-03-04 | 1994-03-01 | Mcnc | Method for testing, burn-in, and/or programming of integrated circuit chips |
US5447264A (en) * | 1994-07-01 | 1995-09-05 | Mcnc | Recessed via apparatus for testing, burn-in, and/or programming of integrated circuit chips, and for placing solder bumps thereon |
US5767010A (en) * | 1995-03-20 | 1998-06-16 | Mcnc | Solder bump fabrication methods and structure including a titanium barrier layer |
US5793116A (en) * | 1996-05-29 | 1998-08-11 | Mcnc | Microelectronic packaging using arched solder columns |
US5892179A (en) * | 1995-04-05 | 1999-04-06 | Mcnc | Solder bumps and structures for integrated redistribution routing conductors |
US5990472A (en) * | 1997-09-29 | 1999-11-23 | Mcnc | Microelectronic radiation detectors for detecting and emitting radiation signals |
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
US6429030B1 (en) | 1999-02-08 | 2002-08-06 | Motorola, Inc. | Method for testing a semiconductor die using wells |
US7495326B2 (en) | 2002-10-22 | 2009-02-24 | Unitive International Limited | Stacked electronic structures including offset substrates |
US8674494B2 (en) | 2011-08-31 | 2014-03-18 | Samsung Electronics Co., Ltd. | Semiconductor package having supporting plate and method of forming the same |
-
1979
- 1979-02-19 JP JP1820979A patent/JPS55111127A/en active Pending
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4950623A (en) * | 1988-08-02 | 1990-08-21 | Microelectronics Center Of North Carolina | Method of building solder bumps |
US5071787A (en) * | 1989-03-14 | 1991-12-10 | Kabushiki Kaisha Toshiba | Semiconductor device utilizing a face-down bonding and a method for manufacturing the same |
US5289631A (en) * | 1992-03-04 | 1994-03-01 | Mcnc | Method for testing, burn-in, and/or programming of integrated circuit chips |
US5374893A (en) * | 1992-03-04 | 1994-12-20 | Mcnc | Apparatus for testing, burn-in, and/or programming of integrated circuit chips, and for placing solder bumps thereon |
US5381946A (en) * | 1992-03-04 | 1995-01-17 | Mcnc | Method of forming differing volume solder bumps |
US5447264A (en) * | 1994-07-01 | 1995-09-05 | Mcnc | Recessed via apparatus for testing, burn-in, and/or programming of integrated circuit chips, and for placing solder bumps thereon |
US6222279B1 (en) | 1995-03-20 | 2001-04-24 | Mcnc | Solder bump fabrication methods and structures including a titanium barrier layer |
US5767010A (en) * | 1995-03-20 | 1998-06-16 | Mcnc | Solder bump fabrication methods and structure including a titanium barrier layer |
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
US6392163B1 (en) | 1995-04-04 | 2002-05-21 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps |
US5892179A (en) * | 1995-04-05 | 1999-04-06 | Mcnc | Solder bumps and structures for integrated redistribution routing conductors |
US6329608B1 (en) | 1995-04-05 | 2001-12-11 | Unitive International Limited | Key-shaped solder bumps and under bump metallurgy |
US6389691B1 (en) | 1995-04-05 | 2002-05-21 | Unitive International Limited | Methods for forming integrated redistribution routing conductors and solder bumps |
US5793116A (en) * | 1996-05-29 | 1998-08-11 | Mcnc | Microelectronic packaging using arched solder columns |
US5990472A (en) * | 1997-09-29 | 1999-11-23 | Mcnc | Microelectronic radiation detectors for detecting and emitting radiation signals |
US6429030B1 (en) | 1999-02-08 | 2002-08-06 | Motorola, Inc. | Method for testing a semiconductor die using wells |
US7495326B2 (en) | 2002-10-22 | 2009-02-24 | Unitive International Limited | Stacked electronic structures including offset substrates |
US8674494B2 (en) | 2011-08-31 | 2014-03-18 | Samsung Electronics Co., Ltd. | Semiconductor package having supporting plate and method of forming the same |
US9412720B2 (en) | 2011-08-31 | 2016-08-09 | Samsung Electronics Co., Ltd. | Semiconductor package having supporting plate and method of forming the same |
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