JPS5489482A - X-ray lithography mask and production of the same - Google Patents
X-ray lithography mask and production of the sameInfo
- Publication number
- JPS5489482A JPS5489482A JP15881177A JP15881177A JPS5489482A JP S5489482 A JPS5489482 A JP S5489482A JP 15881177 A JP15881177 A JP 15881177A JP 15881177 A JP15881177 A JP 15881177A JP S5489482 A JPS5489482 A JP S5489482A
- Authority
- JP
- Japan
- Prior art keywords
- film
- patterns
- substrate
- transmission layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To obtain a mask ideally suited for formation of fine mask patterns by disposing spacers at end edges of the absorber pattern forming surface of a soft X-ray transmission layer provided with X-ray absorber patterns and providing reinforcing supporting beams composed of Si to the end edges on the opposite surface corresponding thereto.
CONSTITUTION: After SiO2 film 2 are deposited on both surfaces of a Si monocrystalline substrate 1 having a thickness necessary for supporting an X-ray transmission layer 5, a Si3N4 film 3 is grown on one surface. Next, patterns of a resist film 4 are provided on this surface and with these as a mask, etching is performed to let the laminated films 2' and 3' of the specified patterns be remained. Thereafter, the film 2 on the opposite surface is removed and an X-ray transmission layer 5 composed of the SiO2 film sandwiched by Si3N4 films is deposited over the entire surface of the exposed substrate 1 and is then covered with a Ti thin film 6 and an Au thin film 7. Next, X-ray absorber patterns 9 composed of Au are formed thereon and thick spacers 11 composed of Ni, Cu or other are provided encircling these. The substrate is then etched from the back side to let the supporting beams 1' thru 3' composed of the substrate and films be remained in opposition to the spacers 11.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15881177A JPS5489482A (en) | 1977-12-27 | 1977-12-27 | X-ray lithography mask and production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15881177A JPS5489482A (en) | 1977-12-27 | 1977-12-27 | X-ray lithography mask and production of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5489482A true JPS5489482A (en) | 1979-07-16 |
Family
ID=15679867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15881177A Pending JPS5489482A (en) | 1977-12-27 | 1977-12-27 | X-ray lithography mask and production of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5489482A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015062212A (en) * | 2013-09-23 | 2015-04-02 | ナショナル シンクロトロン ラディエイション リサーチ センターＮａｔｉｏｎａｌ Ｓｙｎｃｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ | X-ray mask structure and manufacturing method therefor |
-
1977
- 1977-12-27 JP JP15881177A patent/JPS5489482A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015062212A (en) * | 2013-09-23 | 2015-04-02 | ナショナル シンクロトロン ラディエイション リサーチ センターＮａｔｉｏｎａｌ Ｓｙｎｃｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ | X-ray mask structure and manufacturing method therefor |
| US9152036B2 (en) | 2013-09-23 | 2015-10-06 | National Synchrotron Radiation Research Center | X-ray mask structure and method for preparing the same |
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