JPS5480196A - Semiconductor gas sensor - Google Patents

Semiconductor gas sensor

Info

Publication number
JPS5480196A
JPS5480196A JP14749477A JP14749477A JPS5480196A JP S5480196 A JPS5480196 A JP S5480196A JP 14749477 A JP14749477 A JP 14749477A JP 14749477 A JP14749477 A JP 14749477A JP S5480196 A JPS5480196 A JP S5480196A
Authority
JP
Japan
Prior art keywords
gas
detecting
gate electrode
same substrate
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749477A
Other languages
Japanese (ja)
Inventor
Toshiharu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14749477A priority Critical patent/JPS5480196A/en
Publication of JPS5480196A publication Critical patent/JPS5480196A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To improve the selectivity of plural kinds of gas, enhance the quality and durability, and obtain small-sized high-reliablity sensor, by disposing plural gas detecting transistors on the same substrate.
CONSTITUTION: More than two kinds of transistors, for instance, transistor A for detecting carbon monoxide and transistor B for detecting methane gas, are formed on the same substrate 1, and the materials for gate electrode are different for each gas to be detected. In this constitution, in the presence of a specific gas, when the gas enters the gate electrode, a polarization layer is formed on the gate oxide film boundary surface, and the work function between the gate electrode substance and silicon substrate varies, which causes the threshold value to be deviated. Thus, the change in the threshold value may be detected. By detecting plural kinds of gas with MOS transistors sharing the same substrate in this way, the gas selectivity, quality and durability may be improved, so that the high-reliability sensor may be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP14749477A 1977-12-08 1977-12-08 Semiconductor gas sensor Pending JPS5480196A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749477A JPS5480196A (en) 1977-12-08 1977-12-08 Semiconductor gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749477A JPS5480196A (en) 1977-12-08 1977-12-08 Semiconductor gas sensor

Publications (1)

Publication Number Publication Date
JPS5480196A true JPS5480196A (en) 1979-06-26

Family

ID=15431646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749477A Pending JPS5480196A (en) 1977-12-08 1977-12-08 Semiconductor gas sensor

Country Status (1)

Country Link
JP (1) JPS5480196A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007529722A (en) * 2004-03-18 2007-10-25 ミクロナス ゲーエムベーハー Device for detecting gas or gas mixture
WO2024105985A1 (en) * 2022-11-14 2024-05-23 株式会社日立製作所 Gas sensor chip, gas sensing system, and production method for gas sensor chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007529722A (en) * 2004-03-18 2007-10-25 ミクロナス ゲーエムベーハー Device for detecting gas or gas mixture
WO2024105985A1 (en) * 2022-11-14 2024-05-23 株式会社日立製作所 Gas sensor chip, gas sensing system, and production method for gas sensor chip

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