JPS5480092A - Amplification gate thyristor - Google Patents
Amplification gate thyristorInfo
- Publication number
- JPS5480092A JPS5480092A JP10697578A JP10697578A JPS5480092A JP S5480092 A JPS5480092 A JP S5480092A JP 10697578 A JP10697578 A JP 10697578A JP 10697578 A JP10697578 A JP 10697578A JP S5480092 A JPS5480092 A JP S5480092A
- Authority
- JP
- Japan
- Prior art keywords
- gate thyristor
- amplification gate
- amplification
- thyristor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86074277A | 1977-12-14 | 1977-12-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5480092A true JPS5480092A (en) | 1979-06-26 |
Family
ID=25333922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10697578A Pending JPS5480092A (en) | 1977-12-14 | 1978-08-31 | Amplification gate thyristor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5480092A (en) |
DE (1) | DE2846697A1 (en) |
FR (1) | FR2412169A1 (en) |
GB (1) | GB1566540A (en) |
IT (1) | IT7869170A0 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617067A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor switch |
SE423946B (en) * | 1980-10-08 | 1982-06-14 | Asea Ab | TYRISTOR DEVICE FOR SELF-IGNITION |
DE3240564A1 (en) * | 1982-11-03 | 1984-05-03 | Licentia Patent-Verwaltungs-Gmbh | CONTROLLABLE SEMICONDUCTOR SWITCHING ELEMENT |
US4595939A (en) * | 1982-11-15 | 1986-06-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Radiation-controllable thyristor with multiple, non-concentric amplified stages |
GB8305878D0 (en) * | 1983-03-03 | 1983-04-07 | Texas Instruments Ltd | Starter circuit |
DE3561610D1 (en) * | 1984-07-12 | 1988-03-17 | Siemens Ag | Semiconductor power switch with a thyristor |
FR2727571A1 (en) * | 1994-11-25 | 1996-05-31 | Sgs Thomson Microelectronics | THYRISTOR WITH SENSITIVITY IN CONTROLLED RETURN |
-
1978
- 1978-05-24 GB GB22195/78A patent/GB1566540A/en not_active Expired
- 1978-08-31 JP JP10697578A patent/JPS5480092A/en active Pending
- 1978-09-20 IT IT7869170A patent/IT7869170A0/en unknown
- 1978-10-26 DE DE19782846697 patent/DE2846697A1/en not_active Withdrawn
- 1978-12-14 FR FR7835264A patent/FR2412169A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2846697A1 (en) | 1979-06-21 |
IT7869170A0 (en) | 1978-09-20 |
FR2412169B3 (en) | 1981-10-09 |
GB1566540A (en) | 1980-04-30 |
FR2412169A1 (en) | 1979-07-13 |
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