JPS5471590A - Gan light emitting element and production of the same - Google Patents

Gan light emitting element and production of the same

Info

Publication number
JPS5471590A
JPS5471590A JP13862077A JP13862077A JPS5471590A JP S5471590 A JPS5471590 A JP S5471590A JP 13862077 A JP13862077 A JP 13862077A JP 13862077 A JP13862077 A JP 13862077A JP S5471590 A JPS5471590 A JP S5471590A
Authority
JP
Japan
Prior art keywords
light emitting
grooves
light emission
current controlling
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13862077A
Other languages
Japanese (ja)
Other versions
JPS5931232B2 (en
Inventor
Yukio Toyoda
Yoshimasa Oki
Atsuyuki Kobayashi
Isamu Akasaki
Takeshi Hayashi
Masaharu Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52138620A priority Critical patent/JPS5931232B2/en
Publication of JPS5471590A publication Critical patent/JPS5471590A/en
Publication of JPS5931232B2 publication Critical patent/JPS5931232B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To control light emitting color through current controlling by using two kinds of impurities of different light emission wavelengths. CONSTITUTION:Zn-doped GaN 2 is formed on a sapphire substrate, and Mg ion beams 3 are radiated to create an implantation layer 4 on teh crystl surface. The ion implantation is performed by an energy multiple system to flatten the impurity distribution to a dose quantity of 1.9X 10<15>cm<-2>. Next, the surface is covered with CVD SiO2 5 and the substrate is treated for 1 to 20 hours at 1050 deg.C in N2, after which SiO2 is removed. Grooves 6 thicker than the thickness of i layer 4 produced through the ion implantation are provided. In is deposited on the crystal surface and grooves 6 to provide electrode. This constitution enables light emission colors to be readily changed through current controlling under the condition of a constant brightness. This may be embodied even by combining Cd, Hg, Be, etc.
JP52138620A 1977-11-17 1977-11-17 GaN light emitting device Expired JPS5931232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52138620A JPS5931232B2 (en) 1977-11-17 1977-11-17 GaN light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52138620A JPS5931232B2 (en) 1977-11-17 1977-11-17 GaN light emitting device

Publications (2)

Publication Number Publication Date
JPS5471590A true JPS5471590A (en) 1979-06-08
JPS5931232B2 JPS5931232B2 (en) 1984-07-31

Family

ID=15226319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52138620A Expired JPS5931232B2 (en) 1977-11-17 1977-11-17 GaN light emitting device

Country Status (1)

Country Link
JP (1) JPS5931232B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02257678A (en) * 1989-03-30 1990-10-18 Univ Nagoya Manufacture of gallium nitride compound semiconductor light-emitting device
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
US7453091B2 (en) 2004-03-04 2008-11-18 Showa Denko K.K. Gallium nitride-based semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255544A (en) * 1995-03-20 1996-10-01 Nec Corp Lead-less surface mounting relay

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069257B2 (en) * 1989-03-30 1994-02-02 名古屋大学長 Method for producing gallium nitride compound semiconductor light emitting device
JPH02257678A (en) * 1989-03-30 1990-10-18 Univ Nagoya Manufacture of gallium nitride compound semiconductor light-emitting device
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6249012B1 (en) 1990-02-28 2001-06-19 Toyoda Gosei Co., Ltd. Light emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
USRE36747E (en) * 1992-07-23 2000-06-27 Toyoda Gosei Co., Ltd Light-emitting device of gallium nitride compound semiconductor
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
US7453091B2 (en) 2004-03-04 2008-11-18 Showa Denko K.K. Gallium nitride-based semiconductor device

Also Published As

Publication number Publication date
JPS5931232B2 (en) 1984-07-31

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