JPS5470762A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5470762A JPS5470762A JP13756677A JP13756677A JPS5470762A JP S5470762 A JPS5470762 A JP S5470762A JP 13756677 A JP13756677 A JP 13756677A JP 13756677 A JP13756677 A JP 13756677A JP S5470762 A JPS5470762 A JP S5470762A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- oxide film
- semiconductor device
- source
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form the source, the gate and the drain at one time by injecting the impurity ion from above the oxide film featuring varies thickness.
CONSTITUTION: Oxide film 5 and 6 at the drain and source parts are set to the same thickness, and B+7 of a fixed acceleration voltage is injected to form the self- matching gate simultaneously. In this method, the number of the manufacturing processes can be decreased greatly.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13756677A JPS5470762A (en) | 1977-11-16 | 1977-11-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13756677A JPS5470762A (en) | 1977-11-16 | 1977-11-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5470762A true JPS5470762A (en) | 1979-06-06 |
Family
ID=15201705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13756677A Pending JPS5470762A (en) | 1977-11-16 | 1977-11-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5470762A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
US5292675A (en) * | 1991-12-24 | 1994-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a MOS transistor and structure thereof |
US5619045A (en) * | 1993-11-05 | 1997-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US5648277A (en) * | 1993-11-05 | 1997-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US5736414A (en) * | 1994-07-14 | 1998-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US6331723B1 (en) | 1991-08-26 | 2001-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device having at least two transistors having LDD region in one pixel |
US6337231B1 (en) | 1993-05-26 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US6555843B1 (en) | 1991-05-16 | 2003-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6867431B2 (en) * | 1993-09-20 | 2005-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20170358102A1 (en) * | 2016-06-10 | 2017-12-14 | Mitsubishi Electric Corporation | Object recognition processing apparatus, object recognition processing method, and autonomous driving system |
-
1977
- 1977-11-16 JP JP13756677A patent/JPS5470762A/en active Pending
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
US6555843B1 (en) | 1991-05-16 | 2003-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6803600B2 (en) | 1991-08-26 | 2004-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
US7821011B2 (en) | 1991-08-26 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
US7456427B2 (en) | 1991-08-26 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
US6331723B1 (en) | 1991-08-26 | 2001-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device having at least two transistors having LDD region in one pixel |
US5292675A (en) * | 1991-12-24 | 1994-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a MOS transistor and structure thereof |
US7087962B1 (en) | 1991-12-24 | 2006-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a MOS transistor having lightly dopped drain regions and structure thereof |
US6337231B1 (en) | 1993-05-26 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US6867431B2 (en) * | 1993-09-20 | 2005-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6475839B2 (en) | 1993-11-05 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing of TFT device by backside laser irradiation |
US6617612B2 (en) * | 1993-11-05 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a semiconductor integrated circuit |
US6218678B1 (en) | 1993-11-05 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5648277A (en) * | 1993-11-05 | 1997-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US5619045A (en) * | 1993-11-05 | 1997-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US5736414A (en) * | 1994-07-14 | 1998-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20170358102A1 (en) * | 2016-06-10 | 2017-12-14 | Mitsubishi Electric Corporation | Object recognition processing apparatus, object recognition processing method, and autonomous driving system |
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