JPS5469590A - Diamond synthesizing method - Google Patents

Diamond synthesizing method

Info

Publication number
JPS5469590A
JPS5469590A JP13628677A JP13628677A JPS5469590A JP S5469590 A JPS5469590 A JP S5469590A JP 13628677 A JP13628677 A JP 13628677A JP 13628677 A JP13628677 A JP 13628677A JP S5469590 A JPS5469590 A JP S5469590A
Authority
JP
Japan
Prior art keywords
temp
diamond
press
lowest limit
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13628677A
Other languages
Japanese (ja)
Other versions
JPS6035282B2 (en
Inventor
Masao Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52136286A priority Critical patent/JPS6035282B2/en
Publication of JPS5469590A publication Critical patent/JPS5469590A/en
Publication of JPS6035282B2 publication Critical patent/JPS6035282B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/061—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth

Abstract

PURPOSE:To obtain good quality diamond crystal particles having a predetermined narrow particle size distribution by bringing metal catalyst into contact with non- diamond carbon and raising the press. in two steps in the temp. range from the lowest limit of the catalyst-carbon reaction temps. to a specific temp. CONSTITUTION:Metal catalyst such as pure Co disc and non-diamond carbon such as artificial graphite disc are alternately superposed, housed in a reactor, and brought into contact with each other at high temp. and press. At this time, the temp. is set to above the lowest limit of the catalyst-carbon reaction temp. and below a temp. about 25% higher than the lowest limit temp. In the temp. range, the reactor is first held for above 0.5 min at an arbitrary temp. selected from the range and a press. within about 4% higher than the lowest limit of pressures at which diamond is formed when the temp. is maintained. Next the press. is raised to the range above 4% higher than said lowest limit and below about 15% higher than the limit, and held for about 10-15 min. Thus, diamond particles more than 90% of which have a particle size above 200mum are obtained.
JP52136286A 1977-11-15 1977-11-15 Diamond synthesis method Expired JPS6035282B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52136286A JPS6035282B2 (en) 1977-11-15 1977-11-15 Diamond synthesis method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52136286A JPS6035282B2 (en) 1977-11-15 1977-11-15 Diamond synthesis method

Publications (2)

Publication Number Publication Date
JPS5469590A true JPS5469590A (en) 1979-06-04
JPS6035282B2 JPS6035282B2 (en) 1985-08-14

Family

ID=15171614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52136286A Expired JPS6035282B2 (en) 1977-11-15 1977-11-15 Diamond synthesis method

Country Status (1)

Country Link
JP (1) JPS6035282B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203717A (en) * 1983-04-28 1984-11-17 Toshiba Tungaloy Co Ltd Manufacture of diamond crystal
WO2003091467A3 (en) * 2002-04-25 2004-03-18 Morgan Crucible Co Process for manufacturing an alloy material for use in the manufacture of synthetic diamonds
CN107311660A (en) * 2017-06-27 2017-11-03 中南钻石有限公司 Preparation method for the carbon source of IIa type synthesizings
US10370773B2 (en) 2012-03-15 2019-08-06 Element Six Technologies Limited Process for manufacturing synthetic single crystal diamond material using a pressure driven growth process and a plurality of seed pads with each seed pad comprising a plurality of single crystal diamond seeds

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203717A (en) * 1983-04-28 1984-11-17 Toshiba Tungaloy Co Ltd Manufacture of diamond crystal
JPH0557019B2 (en) * 1983-04-28 1993-08-23 Toshiba Tungaloy Co Ltd
WO2003091467A3 (en) * 2002-04-25 2004-03-18 Morgan Crucible Co Process for manufacturing an alloy material for use in the manufacture of synthetic diamonds
CN100400693C (en) * 2002-04-25 2008-07-09 摩根坩埚有限公司 Process for manufacturing diamond using a novel method of catalysis and a new method for processing the graphite and catalyst mixture used in synthesis
US10370773B2 (en) 2012-03-15 2019-08-06 Element Six Technologies Limited Process for manufacturing synthetic single crystal diamond material using a pressure driven growth process and a plurality of seed pads with each seed pad comprising a plurality of single crystal diamond seeds
CN107311660A (en) * 2017-06-27 2017-11-03 中南钻石有限公司 Preparation method for the carbon source of IIa type synthesizings

Also Published As

Publication number Publication date
JPS6035282B2 (en) 1985-08-14

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