JPS5461880A - Electron beam exposure apparatus - Google Patents

Electron beam exposure apparatus

Info

Publication number
JPS5461880A
JPS5461880A JP12898277A JP12898277A JPS5461880A JP S5461880 A JPS5461880 A JP S5461880A JP 12898277 A JP12898277 A JP 12898277A JP 12898277 A JP12898277 A JP 12898277A JP S5461880 A JPS5461880 A JP S5461880A
Authority
JP
Japan
Prior art keywords
electron
beams
aperture
radiation
deflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12898277A
Other languages
Japanese (ja)
Inventor
Yushi Inagaki
Yasuo Furukawa
Masahiro Okabe
Toshihiro Ishizuka
Akio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12898277A priority Critical patent/JPS5461880A/en
Publication of JPS5461880A publication Critical patent/JPS5461880A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To impart beam intensity of plural times to exposure pattern regions and improve shape accuracy by synthesizing a radiation electron beam with plural electron guns and making the synthesized distribution higher in the portions corresponding to the peripheral edge parts of the exposure pattern and lower in the central part.
CONSTITUTION: Electron guns are provided in plurality, such as 111 and 112, in which Wehnelts W are made separate and the focusing lens 2 and deflector 3 below anode A are made common to synthesize both beams, by which the specified point on the first aperture 4 is radiated. At this time, the synthesis timing of the electron beams may be subsequent or synchronized but in the subsequent radiation, the electron gun 111 is driven first and the beam is high speed vibrated with the deflector 3, then when the beam comes to the edge part of the pattern, the next electron gun 112 is driven and the beams are synthesized at the edge part. At the time of synchronous radiation, the respective beams from the electron guns 11, and 112 are vibrated within the range shown by Q, R. In this way, the X2 end is further difined by the aperture 7 with respect to the X1 end defined by the aperture 4.
COPYRIGHT: (C)1979,JPO&Japio
JP12898277A 1977-10-27 1977-10-27 Electron beam exposure apparatus Pending JPS5461880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12898277A JPS5461880A (en) 1977-10-27 1977-10-27 Electron beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12898277A JPS5461880A (en) 1977-10-27 1977-10-27 Electron beam exposure apparatus

Publications (1)

Publication Number Publication Date
JPS5461880A true JPS5461880A (en) 1979-05-18

Family

ID=14998188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12898277A Pending JPS5461880A (en) 1977-10-27 1977-10-27 Electron beam exposure apparatus

Country Status (1)

Country Link
JP (1) JPS5461880A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264411A (en) * 1995-03-20 1996-10-11 Toshiba Corp Electron beam exposure apparatus and proximity effect correcting method in electron beam exposure
JP2003109900A (en) * 2002-09-02 2003-04-11 Toshiba Corp Near field effect correction method in electron beam exposure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264411A (en) * 1995-03-20 1996-10-11 Toshiba Corp Electron beam exposure apparatus and proximity effect correcting method in electron beam exposure
JP2003109900A (en) * 2002-09-02 2003-04-11 Toshiba Corp Near field effect correction method in electron beam exposure

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