JPS5460237A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5460237A JPS5460237A JP12693477A JP12693477A JPS5460237A JP S5460237 A JPS5460237 A JP S5460237A JP 12693477 A JP12693477 A JP 12693477A JP 12693477 A JP12693477 A JP 12693477A JP S5460237 A JPS5460237 A JP S5460237A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- opening
- film
- photoresistor
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To make fine processing without difficulty by the procedure in which the surface of material to be process is coated with a thin film capable of being etched by plasma, and then after a plasma-etching into a desired patern, dry etching is made by using the thin film as mask.
CONSTITUTION: Al 3 is formed on the silicon base plate 1 of a material to be processed with the interposition of the oxidated film 2, and then the plasma CVD nitride film 5 is formed on the surface of the Al 3 by a vapor- phase growth method. The surface of the plasma CVD nitride film 5 is coated with the photoresistor 4 and then the opening 10 is formed by a photomechanical process. Using the photoresistor 4 as a masking film, the exposure which is in the opening 10 is removed by plasma etching using a gas, e.g., CF4, etc., and then the remaining photoresistor 4 is removed in oxygen plasma. Using the nitride film 5 from which the opening 10 is removed as a mask, the exposure of the Al 3 which corresponds to the opening 10 is removed by dry etching in a gas plasma, e.g., CCl4 etc
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12693477A JPS5835262B2 (en) | 1977-10-21 | 1977-10-21 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12693477A JPS5835262B2 (en) | 1977-10-21 | 1977-10-21 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5460237A true JPS5460237A (en) | 1979-05-15 |
JPS5835262B2 JPS5835262B2 (en) | 1983-08-01 |
Family
ID=14947508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12693477A Expired JPS5835262B2 (en) | 1977-10-21 | 1977-10-21 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5835262B2 (en) |
-
1977
- 1977-10-21 JP JP12693477A patent/JPS5835262B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5835262B2 (en) | 1983-08-01 |
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