JPS5460237A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5460237A
JPS5460237A JP12693477A JP12693477A JPS5460237A JP S5460237 A JPS5460237 A JP S5460237A JP 12693477 A JP12693477 A JP 12693477A JP 12693477 A JP12693477 A JP 12693477A JP S5460237 A JPS5460237 A JP S5460237A
Authority
JP
Japan
Prior art keywords
plasma
opening
film
photoresistor
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12693477A
Other languages
Japanese (ja)
Other versions
JPS5835262B2 (en
Inventor
Hidenobu Ishikura
Hirotsugu Harada
Shinichi Sato
Hisao Yakushiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12693477A priority Critical patent/JPS5835262B2/en
Publication of JPS5460237A publication Critical patent/JPS5460237A/en
Publication of JPS5835262B2 publication Critical patent/JPS5835262B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make fine processing without difficulty by the procedure in which the surface of material to be process is coated with a thin film capable of being etched by plasma, and then after a plasma-etching into a desired patern, dry etching is made by using the thin film as mask.
CONSTITUTION: Al 3 is formed on the silicon base plate 1 of a material to be processed with the interposition of the oxidated film 2, and then the plasma CVD nitride film 5 is formed on the surface of the Al 3 by a vapor- phase growth method. The surface of the plasma CVD nitride film 5 is coated with the photoresistor 4 and then the opening 10 is formed by a photomechanical process. Using the photoresistor 4 as a masking film, the exposure which is in the opening 10 is removed by plasma etching using a gas, e.g., CF4, etc., and then the remaining photoresistor 4 is removed in oxygen plasma. Using the nitride film 5 from which the opening 10 is removed as a mask, the exposure of the Al 3 which corresponds to the opening 10 is removed by dry etching in a gas plasma, e.g., CCl4 etc
COPYRIGHT: (C)1979,JPO&Japio
JP12693477A 1977-10-21 1977-10-21 Etching method Expired JPS5835262B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12693477A JPS5835262B2 (en) 1977-10-21 1977-10-21 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12693477A JPS5835262B2 (en) 1977-10-21 1977-10-21 Etching method

Publications (2)

Publication Number Publication Date
JPS5460237A true JPS5460237A (en) 1979-05-15
JPS5835262B2 JPS5835262B2 (en) 1983-08-01

Family

ID=14947508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12693477A Expired JPS5835262B2 (en) 1977-10-21 1977-10-21 Etching method

Country Status (1)

Country Link
JP (1) JPS5835262B2 (en)

Also Published As

Publication number Publication date
JPS5835262B2 (en) 1983-08-01

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