JPS5458321A - Ram semiconductor integrated circuit - Google Patents
Ram semiconductor integrated circuitInfo
- Publication number
- JPS5458321A JPS5458321A JP12450177A JP12450177A JPS5458321A JP S5458321 A JPS5458321 A JP S5458321A JP 12450177 A JP12450177 A JP 12450177A JP 12450177 A JP12450177 A JP 12450177A JP S5458321 A JPS5458321 A JP S5458321A
- Authority
- JP
- Japan
- Prior art keywords
- turned
- clear out
- slow leakage
- signal
- misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To reduce power consumption while preventing misoperation, by performing the clear out operation and the slow leakage operation as the operation of MISFET provided between the word lines and the ground lines through time split and under the current setting. CONSTITUTION:MISFETQ32 is turned on with the high potential of the line address RA signal at standby, the gate voltage Tc of MISFETQ26 and Q27 provided between the word lines and the ground lines is approximately taken as the power supply voltage VDD and it is turned on at the saturation region, enabling to perform clear out quickly. Next, at chip selection, the RA signal is of low potential and MISFETQ37 is turned on at the leading of the RA start signal RAS, and MISFETQ 26 and Q27 flow the slow leakage current biased with the voltage dividing voltage. That is, the clear out operation and the slow leakage operation as the operation of MISFET are timingly splitted under current setting, allowing to reduce the power consumption while preventing misoperation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52124501A JPS6027115B2 (en) | 1977-10-19 | 1977-10-19 | RAM semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52124501A JPS6027115B2 (en) | 1977-10-19 | 1977-10-19 | RAM semiconductor integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59152907A Division JPS60121595A (en) | 1984-07-25 | 1984-07-25 | Ram semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5458321A true JPS5458321A (en) | 1979-05-11 |
JPS6027115B2 JPS6027115B2 (en) | 1985-06-27 |
Family
ID=14887043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52124501A Expired JPS6027115B2 (en) | 1977-10-19 | 1977-10-19 | RAM semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6027115B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750385A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Semiconductor device |
JPS5835792A (en) * | 1981-08-24 | 1983-03-02 | Hitachi Ltd | Dynamic type misram |
JPS5948890A (en) * | 1982-09-10 | 1984-03-21 | Nec Corp | Memory circuit |
JPS5960794A (en) * | 1982-09-29 | 1984-04-06 | Fujitsu Ltd | Dynamic semiconductor storage device |
JPS5979488A (en) * | 1982-10-28 | 1984-05-08 | Nec Corp | Mos memory circuit |
JPS63171494A (en) * | 1987-02-20 | 1988-07-15 | Toshiba Corp | Address selecting circuit |
JPH02223095A (en) * | 1988-11-17 | 1990-09-05 | Nec Corp | Semiconductor circuit |
US5113374A (en) * | 1989-08-30 | 1992-05-12 | Nec Corporation | Mos type semiconductor memory device having a word line resetting circuit |
US5394354A (en) * | 1992-12-21 | 1995-02-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory and its layout design |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63198605U (en) * | 1987-06-12 | 1988-12-21 |
-
1977
- 1977-10-19 JP JP52124501A patent/JPS6027115B2/en not_active Expired
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750385A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Semiconductor device |
JPS5835792A (en) * | 1981-08-24 | 1983-03-02 | Hitachi Ltd | Dynamic type misram |
JPS5948890A (en) * | 1982-09-10 | 1984-03-21 | Nec Corp | Memory circuit |
JPS5960794A (en) * | 1982-09-29 | 1984-04-06 | Fujitsu Ltd | Dynamic semiconductor storage device |
JPH0410154B2 (en) * | 1982-09-29 | 1992-02-24 | ||
JPS5979488A (en) * | 1982-10-28 | 1984-05-08 | Nec Corp | Mos memory circuit |
JPS63171494A (en) * | 1987-02-20 | 1988-07-15 | Toshiba Corp | Address selecting circuit |
JPH0522319B2 (en) * | 1987-02-20 | 1993-03-29 | Tokyo Shibaura Electric Co | |
JPH02223095A (en) * | 1988-11-17 | 1990-09-05 | Nec Corp | Semiconductor circuit |
US5113374A (en) * | 1989-08-30 | 1992-05-12 | Nec Corporation | Mos type semiconductor memory device having a word line resetting circuit |
US5394354A (en) * | 1992-12-21 | 1995-02-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory and its layout design |
Also Published As
Publication number | Publication date |
---|---|
JPS6027115B2 (en) | 1985-06-27 |
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