JPS5458321A - Ram semiconductor integrated circuit - Google Patents

Ram semiconductor integrated circuit

Info

Publication number
JPS5458321A
JPS5458321A JP12450177A JP12450177A JPS5458321A JP S5458321 A JPS5458321 A JP S5458321A JP 12450177 A JP12450177 A JP 12450177A JP 12450177 A JP12450177 A JP 12450177A JP S5458321 A JPS5458321 A JP S5458321A
Authority
JP
Japan
Prior art keywords
turned
clear out
slow leakage
signal
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12450177A
Other languages
Japanese (ja)
Other versions
JPS6027115B2 (en
Inventor
Shunei Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52124501A priority Critical patent/JPS6027115B2/en
Publication of JPS5458321A publication Critical patent/JPS5458321A/en
Publication of JPS6027115B2 publication Critical patent/JPS6027115B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To reduce power consumption while preventing misoperation, by performing the clear out operation and the slow leakage operation as the operation of MISFET provided between the word lines and the ground lines through time split and under the current setting. CONSTITUTION:MISFETQ32 is turned on with the high potential of the line address RA signal at standby, the gate voltage Tc of MISFETQ26 and Q27 provided between the word lines and the ground lines is approximately taken as the power supply voltage VDD and it is turned on at the saturation region, enabling to perform clear out quickly. Next, at chip selection, the RA signal is of low potential and MISFETQ37 is turned on at the leading of the RA start signal RAS, and MISFETQ 26 and Q27 flow the slow leakage current biased with the voltage dividing voltage. That is, the clear out operation and the slow leakage operation as the operation of MISFET are timingly splitted under current setting, allowing to reduce the power consumption while preventing misoperation.
JP52124501A 1977-10-19 1977-10-19 RAM semiconductor integrated circuit Expired JPS6027115B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52124501A JPS6027115B2 (en) 1977-10-19 1977-10-19 RAM semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52124501A JPS6027115B2 (en) 1977-10-19 1977-10-19 RAM semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59152907A Division JPS60121595A (en) 1984-07-25 1984-07-25 Ram semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5458321A true JPS5458321A (en) 1979-05-11
JPS6027115B2 JPS6027115B2 (en) 1985-06-27

Family

ID=14887043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52124501A Expired JPS6027115B2 (en) 1977-10-19 1977-10-19 RAM semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6027115B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750385A (en) * 1980-09-10 1982-03-24 Nec Corp Semiconductor device
JPS5835792A (en) * 1981-08-24 1983-03-02 Hitachi Ltd Dynamic type misram
JPS5948890A (en) * 1982-09-10 1984-03-21 Nec Corp Memory circuit
JPS5960794A (en) * 1982-09-29 1984-04-06 Fujitsu Ltd Dynamic semiconductor storage device
JPS5979488A (en) * 1982-10-28 1984-05-08 Nec Corp Mos memory circuit
JPS63171494A (en) * 1987-02-20 1988-07-15 Toshiba Corp Address selecting circuit
JPH02223095A (en) * 1988-11-17 1990-09-05 Nec Corp Semiconductor circuit
US5113374A (en) * 1989-08-30 1992-05-12 Nec Corporation Mos type semiconductor memory device having a word line resetting circuit
US5394354A (en) * 1992-12-21 1995-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor memory and its layout design

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198605U (en) * 1987-06-12 1988-12-21

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750385A (en) * 1980-09-10 1982-03-24 Nec Corp Semiconductor device
JPS5835792A (en) * 1981-08-24 1983-03-02 Hitachi Ltd Dynamic type misram
JPS5948890A (en) * 1982-09-10 1984-03-21 Nec Corp Memory circuit
JPS5960794A (en) * 1982-09-29 1984-04-06 Fujitsu Ltd Dynamic semiconductor storage device
JPH0410154B2 (en) * 1982-09-29 1992-02-24
JPS5979488A (en) * 1982-10-28 1984-05-08 Nec Corp Mos memory circuit
JPS63171494A (en) * 1987-02-20 1988-07-15 Toshiba Corp Address selecting circuit
JPH0522319B2 (en) * 1987-02-20 1993-03-29 Tokyo Shibaura Electric Co
JPH02223095A (en) * 1988-11-17 1990-09-05 Nec Corp Semiconductor circuit
US5113374A (en) * 1989-08-30 1992-05-12 Nec Corporation Mos type semiconductor memory device having a word line resetting circuit
US5394354A (en) * 1992-12-21 1995-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor memory and its layout design

Also Published As

Publication number Publication date
JPS6027115B2 (en) 1985-06-27

Similar Documents

Publication Publication Date Title
JPS55149871A (en) Line voltage detector
JPS5458321A (en) Ram semiconductor integrated circuit
JPS5687933A (en) Bootstrap circuit
JPS52131449A (en) Semiconductor switch circuit
JPS535585A (en) Semiconductor ic unit
JPS5384578A (en) Semiconductor integrated circuit
JPS5570986A (en) Semiconductor intergrated circuit device
JPS53108392A (en) Semiconductor device
JPS53135249A (en) Logic circuit system for integration
JPS55132589A (en) Semiconductor memory unit
JPS5437481A (en) Amplifier circuit
JPS53121435A (en) Arithmetic operation control unit
JPS5436173A (en) Gate circuit
JPS53118984A (en) Semiconductor switch
JPS5211877A (en) Bootstrap circuit
JPS547149A (en) Constant current circuit
JPS51147980A (en) Semiconductor integrated circuit
JPS5266366A (en) Semiconductor logic circuit
JPS5258450A (en) Transistor output circuit
JPS51126772A (en) Electrolytic effect type semiconductor unit
JPS5250181A (en) Semiconductor integrated circuit device
JPS52123179A (en) Mos type semiconductor device and its production
JPS5469949A (en) Mos integrated circuit device
JPS5217761A (en) Semiconductor universal - direction switch
JPS5266365A (en) Semiconductor logic circuit