JPS5448175A - Measuring method for forward transmission admittance of field effect transistor - Google Patents

Measuring method for forward transmission admittance of field effect transistor

Info

Publication number
JPS5448175A
JPS5448175A JP11459177A JP11459177A JPS5448175A JP S5448175 A JPS5448175 A JP S5448175A JP 11459177 A JP11459177 A JP 11459177A JP 11459177 A JP11459177 A JP 11459177A JP S5448175 A JPS5448175 A JP S5448175A
Authority
JP
Japan
Prior art keywords
fet
measurement
vgs
measuring method
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11459177A
Other languages
Japanese (ja)
Inventor
Koji Nakamura
Hidenari Umezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11459177A priority Critical patent/JPS5448175A/en
Publication of JPS5448175A publication Critical patent/JPS5448175A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To realize a measuring method for the forward admittance of FET, featuring reduced power consumption and a short measurement time.
CONSTITUTION: The necessary current value ID1 flowing to FET is subscribed, and the measurement is given to gate-source voltage VGS1 obtained based on value VD1. Then variation ΔVGS (for example 1V) of the voltage predetermined is subtracted from voltage VGS1; this voltage (VGS1-VGS) is applied to FET; current ID2 obtained then is measured. Based on these readings, an and operation is carried out to satisfy the equation GM=(ID1-ID2)/ΔVGS, and the forward transmission admittance is measured for FET. As a result, the measurement time can be shorten ed since the switch is kept on for a little moment by the pulse for measurement, and the self heat generation can be avoided for FET since the current is flown for a little moment. Furthermore, the AC signals and their process circuit are not needed within the measurement circuit because the process is performed only with the DC signals
COPYRIGHT: (C)1979,JPO&Japio
JP11459177A 1977-09-26 1977-09-26 Measuring method for forward transmission admittance of field effect transistor Pending JPS5448175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11459177A JPS5448175A (en) 1977-09-26 1977-09-26 Measuring method for forward transmission admittance of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11459177A JPS5448175A (en) 1977-09-26 1977-09-26 Measuring method for forward transmission admittance of field effect transistor

Publications (1)

Publication Number Publication Date
JPS5448175A true JPS5448175A (en) 1979-04-16

Family

ID=14641682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11459177A Pending JPS5448175A (en) 1977-09-26 1977-09-26 Measuring method for forward transmission admittance of field effect transistor

Country Status (1)

Country Link
JP (1) JPS5448175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875073A (en) * 1981-10-29 1983-05-06 Yokogawa Hewlett Packard Ltd Dc characteristic measuring system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875073A (en) * 1981-10-29 1983-05-06 Yokogawa Hewlett Packard Ltd Dc characteristic measuring system
JPH0472195B2 (en) * 1981-10-29 1992-11-17 Yokogawa Hyuuretsuto Patsukaado Kk

Similar Documents

Publication Publication Date Title
JPS5448175A (en) Measuring method for forward transmission admittance of field effect transistor
JPS5624551A (en) Device for measuring corrosion speed of metal
JPS5411054A (en) Monitoring for high frequency electric welding phenomenon and nomitor-control equipment
JPS5249868A (en) Method of measuring resistance of oil film
JPS53115158A (en) Multiplying equipment using hall device
JPS535577A (en) Ignition property measurement method for controllable semiconductor device
JPS57162362A (en) Measuring method for latchup withstand amount of complementary mos integrated circuit device
JPS5384685A (en) Semicocductor element measuring method
JPS5473580A (en) Temperature measuring of mis semiconductor unit
JPS57201885A (en) Electronic circuit
JPS5572878A (en) Measuring method for variation rate of amplification factor of emitter earth direct current to direct-current collector current of transistor
JPS57200842A (en) Cereals moisture measuring device equipped with temperature compensating function for oscillating circuit
JPS5649949A (en) Electric hygrometer
JPS5529722A (en) Current measuring unit
JPS5390875A (en) Test equipment for semiconductor device
JPS5414683A (en) Measuring circuit for turn-off time
JPS57124249A (en) Method and apparatus for measuring interfacial dynamic electricity phenomenon
JPS576369A (en) Constant power load tester
JPS5270879A (en) Current measuring circuit
JPS53105160A (en) Measuring circuit system for alternating current gain
JPS6431064A (en) Apparatus for measuring electric parts
JPS5550171A (en) Method of sorting field-effect transistor and device for sorting and measuring said transistor
JPS53112674A (en) Measuring method for current-coltage characteristics of semiconductor devic e
JPS5384686A (en) Power source current measuring method of highly integrated ic
JPS57133359A (en) Measuring instrument for signal voltage