JPS5442975A - Forming method of semiconductor electrode - Google Patents
Forming method of semiconductor electrodeInfo
- Publication number
- JPS5442975A JPS5442975A JP10877877A JP10877877A JPS5442975A JP S5442975 A JPS5442975 A JP S5442975A JP 10877877 A JP10877877 A JP 10877877A JP 10877877 A JP10877877 A JP 10877877A JP S5442975 A JPS5442975 A JP S5442975A
- Authority
- JP
- Japan
- Prior art keywords
- forming method
- semiconductor electrode
- film
- electrode
- evaporating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain an ohmic electrode featuring large adhesive force and low electric resistance by evaporating Au - Zn film on P-type chemical semiconductor containing P as one of the primary components and then attaching the electrode composed of Cr, Ti, Mo and the like via the Au - Zn film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10877877A JPS5442975A (en) | 1977-09-12 | 1977-09-12 | Forming method of semiconductor electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10877877A JPS5442975A (en) | 1977-09-12 | 1977-09-12 | Forming method of semiconductor electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5442975A true JPS5442975A (en) | 1979-04-05 |
JPS5742214B2 JPS5742214B2 (en) | 1982-09-07 |
Family
ID=14493229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10877877A Granted JPS5442975A (en) | 1977-09-12 | 1977-09-12 | Forming method of semiconductor electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5442975A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577982A (en) * | 1980-06-18 | 1982-01-16 | Fujitsu Ltd | Manufacture of light emitting element |
US5015603A (en) * | 1988-06-17 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | TiW diffusion barrier for AuZn ohmic contact to P-Type InP |
JPH11177184A (en) * | 1997-12-11 | 1999-07-02 | Ricoh Co Ltd | Semiconductor laser device and its manufacture |
-
1977
- 1977-09-12 JP JP10877877A patent/JPS5442975A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577982A (en) * | 1980-06-18 | 1982-01-16 | Fujitsu Ltd | Manufacture of light emitting element |
US5015603A (en) * | 1988-06-17 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | TiW diffusion barrier for AuZn ohmic contact to P-Type InP |
JPH11177184A (en) * | 1997-12-11 | 1999-07-02 | Ricoh Co Ltd | Semiconductor laser device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS5742214B2 (en) | 1982-09-07 |
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