JPS53110470A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53110470A
JPS53110470A JP2621277A JP2621277A JPS53110470A JP S53110470 A JPS53110470 A JP S53110470A JP 2621277 A JP2621277 A JP 2621277A JP 2621277 A JP2621277 A JP 2621277A JP S53110470 A JPS53110470 A JP S53110470A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
proton
radiating
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2621277A
Other languages
Japanese (ja)
Other versions
JPS6051263B2 (en
Inventor
Ryuichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2621277A priority Critical patent/JPS6051263B2/en
Publication of JPS53110470A publication Critical patent/JPS53110470A/en
Publication of JPS6051263B2 publication Critical patent/JPS6051263B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To manufacture the device, by providing the electrodes on the crystal surface semi-insulated by radiating proton, and by protecting the surface with anode oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP2621277A 1977-03-09 1977-03-09 Manufacturing method of semiconductor device Expired JPS6051263B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2621277A JPS6051263B2 (en) 1977-03-09 1977-03-09 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2621277A JPS6051263B2 (en) 1977-03-09 1977-03-09 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53110470A true JPS53110470A (en) 1978-09-27
JPS6051263B2 JPS6051263B2 (en) 1985-11-13

Family

ID=12187118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2621277A Expired JPS6051263B2 (en) 1977-03-09 1977-03-09 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6051263B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195822A (en) * 1983-04-20 1984-11-07 Sanyo Electric Co Ltd Formation of impurity region
JPS60145675A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Gaas fet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195822A (en) * 1983-04-20 1984-11-07 Sanyo Electric Co Ltd Formation of impurity region
JPS60145675A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Gaas fet

Also Published As

Publication number Publication date
JPS6051263B2 (en) 1985-11-13

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