JPS5439579A - Semiconductor device of field effect type - Google Patents

Semiconductor device of field effect type

Info

Publication number
JPS5439579A
JPS5439579A JP10560677A JP10560677A JPS5439579A JP S5439579 A JPS5439579 A JP S5439579A JP 10560677 A JP10560677 A JP 10560677A JP 10560677 A JP10560677 A JP 10560677A JP S5439579 A JPS5439579 A JP S5439579A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
effect type
increase
amolification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10560677A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Todoroki Kamakura
Nobuo Niwayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10560677A priority Critical patent/JPS5439579A/en
Publication of JPS5439579A publication Critical patent/JPS5439579A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To enable to increase the gate width remarkably and to increase the amolification factor and the degree of integration, by taking cubic constitution for the active region and placing the gate electrodes with opposing each other.
COPYRIGHT: (C)1979,JPO&Japio
JP10560677A 1977-09-02 1977-09-02 Semiconductor device of field effect type Pending JPS5439579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10560677A JPS5439579A (en) 1977-09-02 1977-09-02 Semiconductor device of field effect type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10560677A JPS5439579A (en) 1977-09-02 1977-09-02 Semiconductor device of field effect type

Publications (1)

Publication Number Publication Date
JPS5439579A true JPS5439579A (en) 1979-03-27

Family

ID=14412154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10560677A Pending JPS5439579A (en) 1977-09-02 1977-09-02 Semiconductor device of field effect type

Country Status (1)

Country Link
JP (1) JPS5439579A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583287A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Vertical cylindrical mos field effect transistor
JPS60264246A (en) * 1984-06-13 1985-12-27 鐘淵化学工業株式会社 Continuous manufacture of laminated board for electricity
US4663644A (en) * 1983-12-26 1987-05-05 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPS62272570A (en) * 1986-03-24 1987-11-26 シリコニクス　インコ−ポレイテツド Planar vertical channel dmos structure
US5087509A (en) * 1989-05-22 1992-02-11 Mitsubishi Metal Corporation Substrate used for fabrication of thick film circuit
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583287A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Vertical cylindrical mos field effect transistor
US4663644A (en) * 1983-12-26 1987-05-05 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPS60264246A (en) * 1984-06-13 1985-12-27 鐘淵化学工業株式会社 Continuous manufacture of laminated board for electricity
JPH047699B2 (en) * 1984-06-13 1992-02-12 Kanegafuchi Chemical Ind
JPS62272570A (en) * 1986-03-24 1987-11-26 シリコニクス　インコ−ポレイテツド Planar vertical channel dmos structure
US5087509A (en) * 1989-05-22 1992-02-11 Mitsubishi Metal Corporation Substrate used for fabrication of thick film circuit
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact

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