JPS5441091A - Semiconductor photoelectric transducer - Google Patents
Semiconductor photoelectric transducerInfo
- Publication number
- JPS5441091A JPS5441091A JP10853777A JP10853777A JPS5441091A JP S5441091 A JPS5441091 A JP S5441091A JP 10853777 A JP10853777 A JP 10853777A JP 10853777 A JP10853777 A JP 10853777A JP S5441091 A JPS5441091 A JP S5441091A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- photoelectric transducer
- semiconductor photoelectric
- semiconductors
- larger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To perform photoelectric conversion of less noise by forming the pn junction or Schottky junction of semiconductors of larger ratios of ionization coefficients of electrons and holes and of a larger forbidden band width as compared to the semiconductors on a semiconductor substrate and performing avalanche multiplication with the junction.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10853777A JPS5441091A (en) | 1977-09-08 | 1977-09-08 | Semiconductor photoelectric transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10853777A JPS5441091A (en) | 1977-09-08 | 1977-09-08 | Semiconductor photoelectric transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5441091A true JPS5441091A (en) | 1979-03-31 |
Family
ID=14487314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10853777A Pending JPS5441091A (en) | 1977-09-08 | 1977-09-08 | Semiconductor photoelectric transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5441091A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680179A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Planar type hetero-junction light detector |
JPS58197782A (en) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | Semiconductor light-receiving device |
EP0233649A2 (en) * | 1986-02-21 | 1987-08-26 | Kabushiki Kaisha Toshiba | IC-Incorporated memory card |
US6927417B2 (en) | 2001-11-13 | 2005-08-09 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
-
1977
- 1977-09-08 JP JP10853777A patent/JPS5441091A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680179A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Planar type hetero-junction light detector |
JPS63955B2 (en) * | 1979-12-05 | 1988-01-09 | Nippon Electric Co | |
JPS58197782A (en) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | Semiconductor light-receiving device |
JPH0159747B2 (en) * | 1982-05-13 | 1989-12-19 | Fujitsu Ltd | |
EP0233649A2 (en) * | 1986-02-21 | 1987-08-26 | Kabushiki Kaisha Toshiba | IC-Incorporated memory card |
US6927417B2 (en) | 2001-11-13 | 2005-08-09 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
US7368797B2 (en) | 2001-11-13 | 2008-05-06 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
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