JPS5441091A - Semiconductor photoelectric transducer - Google Patents

Semiconductor photoelectric transducer

Info

Publication number
JPS5441091A
JPS5441091A JP10853777A JP10853777A JPS5441091A JP S5441091 A JPS5441091 A JP S5441091A JP 10853777 A JP10853777 A JP 10853777A JP 10853777 A JP10853777 A JP 10853777A JP S5441091 A JPS5441091 A JP S5441091A
Authority
JP
Japan
Prior art keywords
junction
photoelectric transducer
semiconductor photoelectric
semiconductors
larger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10853777A
Other languages
Japanese (ja)
Inventor
Yoshihiro Todokoro
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10853777A priority Critical patent/JPS5441091A/en
Publication of JPS5441091A publication Critical patent/JPS5441091A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform photoelectric conversion of less noise by forming the pn junction or Schottky junction of semiconductors of larger ratios of ionization coefficients of electrons and holes and of a larger forbidden band width as compared to the semiconductors on a semiconductor substrate and performing avalanche multiplication with the junction.
COPYRIGHT: (C)1979,JPO&Japio
JP10853777A 1977-09-08 1977-09-08 Semiconductor photoelectric transducer Pending JPS5441091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10853777A JPS5441091A (en) 1977-09-08 1977-09-08 Semiconductor photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10853777A JPS5441091A (en) 1977-09-08 1977-09-08 Semiconductor photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5441091A true JPS5441091A (en) 1979-03-31

Family

ID=14487314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10853777A Pending JPS5441091A (en) 1977-09-08 1977-09-08 Semiconductor photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5441091A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680179A (en) * 1979-12-05 1981-07-01 Nec Corp Planar type hetero-junction light detector
JPS58197782A (en) * 1982-05-13 1983-11-17 Fujitsu Ltd Semiconductor light-receiving device
EP0233649A2 (en) * 1986-02-21 1987-08-26 Kabushiki Kaisha Toshiba IC-Incorporated memory card
US6927417B2 (en) 2001-11-13 2005-08-09 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680179A (en) * 1979-12-05 1981-07-01 Nec Corp Planar type hetero-junction light detector
JPS63955B2 (en) * 1979-12-05 1988-01-09 Nippon Electric Co
JPS58197782A (en) * 1982-05-13 1983-11-17 Fujitsu Ltd Semiconductor light-receiving device
JPH0159747B2 (en) * 1982-05-13 1989-12-19 Fujitsu Ltd
EP0233649A2 (en) * 1986-02-21 1987-08-26 Kabushiki Kaisha Toshiba IC-Incorporated memory card
US6927417B2 (en) 2001-11-13 2005-08-09 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same
US7368797B2 (en) 2001-11-13 2008-05-06 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same

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