JPS5429570A - Manufacture for semiconductor element - Google Patents

Manufacture for semiconductor element

Info

Publication number
JPS5429570A
JPS5429570A JP9487577A JP9487577A JPS5429570A JP S5429570 A JPS5429570 A JP S5429570A JP 9487577 A JP9487577 A JP 9487577A JP 9487577 A JP9487577 A JP 9487577A JP S5429570 A JPS5429570 A JP S5429570A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor element
deterioration
protecting
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9487577A
Other languages
Japanese (ja)
Inventor
Yukinobu Shinoda
Goji Kawakami
Masao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9487577A priority Critical patent/JPS5429570A/en
Publication of JPS5429570A publication Critical patent/JPS5429570A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To avoid the deterioration of element, by directly oxidizing the element constituting atoms for PN junction element surface using III-V group chemical compound semiconductor at a low temperature around room temperature and by protecting the element end with the oxide film without boundary distortion.
COPYRIGHT: (C)1979,JPO&Japio
JP9487577A 1977-08-08 1977-08-08 Manufacture for semiconductor element Pending JPS5429570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9487577A JPS5429570A (en) 1977-08-08 1977-08-08 Manufacture for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9487577A JPS5429570A (en) 1977-08-08 1977-08-08 Manufacture for semiconductor element

Publications (1)

Publication Number Publication Date
JPS5429570A true JPS5429570A (en) 1979-03-05

Family

ID=14122213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9487577A Pending JPS5429570A (en) 1977-08-08 1977-08-08 Manufacture for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5429570A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623895A (en) * 1979-08-07 1981-03-06 Agency Of Ind Science & Technol Increase of yield of glucose
JPS57170195A (en) * 1981-04-15 1982-10-20 Hayashibara Biochem Lab Inc Preparation of glucose
JP2008226867A (en) * 2007-03-08 2008-09-25 Mitsubishi Electric Corp Semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140284A (en) * 1974-04-27 1975-11-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140284A (en) * 1974-04-27 1975-11-10

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623895A (en) * 1979-08-07 1981-03-06 Agency Of Ind Science & Technol Increase of yield of glucose
JPS5714159B2 (en) * 1979-08-07 1982-03-23
JPS57170195A (en) * 1981-04-15 1982-10-20 Hayashibara Biochem Lab Inc Preparation of glucose
JPH0153036B2 (en) * 1981-04-15 1989-11-10 Hayashibara Seibutsu Kagaku Kenkyusho Kk
JP2008226867A (en) * 2007-03-08 2008-09-25 Mitsubishi Electric Corp Semiconductor laser device

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