JPS5429570A - Manufacture for semiconductor element - Google Patents
Manufacture for semiconductor elementInfo
- Publication number
- JPS5429570A JPS5429570A JP9487577A JP9487577A JPS5429570A JP S5429570 A JPS5429570 A JP S5429570A JP 9487577 A JP9487577 A JP 9487577A JP 9487577 A JP9487577 A JP 9487577A JP S5429570 A JPS5429570 A JP S5429570A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor element
- deterioration
- protecting
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To avoid the deterioration of element, by directly oxidizing the element constituting atoms for PN junction element surface using III-V group chemical compound semiconductor at a low temperature around room temperature and by protecting the element end with the oxide film without boundary distortion.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9487577A JPS5429570A (en) | 1977-08-08 | 1977-08-08 | Manufacture for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9487577A JPS5429570A (en) | 1977-08-08 | 1977-08-08 | Manufacture for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5429570A true JPS5429570A (en) | 1979-03-05 |
Family
ID=14122213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9487577A Pending JPS5429570A (en) | 1977-08-08 | 1977-08-08 | Manufacture for semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5429570A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5623895A (en) * | 1979-08-07 | 1981-03-06 | Agency Of Ind Science & Technol | Increase of yield of glucose |
JPS57170195A (en) * | 1981-04-15 | 1982-10-20 | Hayashibara Biochem Lab Inc | Preparation of glucose |
JP2008226867A (en) * | 2007-03-08 | 2008-09-25 | Mitsubishi Electric Corp | Semiconductor laser device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140284A (en) * | 1974-04-27 | 1975-11-10 |
-
1977
- 1977-08-08 JP JP9487577A patent/JPS5429570A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140284A (en) * | 1974-04-27 | 1975-11-10 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5623895A (en) * | 1979-08-07 | 1981-03-06 | Agency Of Ind Science & Technol | Increase of yield of glucose |
JPS5714159B2 (en) * | 1979-08-07 | 1982-03-23 | ||
JPS57170195A (en) * | 1981-04-15 | 1982-10-20 | Hayashibara Biochem Lab Inc | Preparation of glucose |
JPH0153036B2 (en) * | 1981-04-15 | 1989-11-10 | Hayashibara Seibutsu Kagaku Kenkyusho Kk | |
JP2008226867A (en) * | 2007-03-08 | 2008-09-25 | Mitsubishi Electric Corp | Semiconductor laser device |
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