JPS544088A - Manufacture for semiconductor laser - Google Patents

Manufacture for semiconductor laser

Info

Publication number
JPS544088A
JPS544088A JP6892177A JP6892177A JPS544088A JP S544088 A JPS544088 A JP S544088A JP 6892177 A JP6892177 A JP 6892177A JP 6892177 A JP6892177 A JP 6892177A JP S544088 A JPS544088 A JP S544088A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor laser
crystal
liquid phase
concave groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6892177A
Other languages
Japanese (ja)
Other versions
JPS6042639B2 (en
Inventor
Konen Doi
Kunio Aiki
Kiyohiko Funakoshi
Takaro Kuroda
Michiharu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6892177A priority Critical patent/JPS6042639B2/en
Publication of JPS544088A publication Critical patent/JPS544088A/en
Publication of JPS6042639B2 publication Critical patent/JPS6042639B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To manufacture a semiconductor laser formed growing double hetero crystal on a GaAs substrate crystal having concave groove, with stable oscillation mode and liquid phase growing method.
COPYRIGHT: (C)1979,JPO&Japio
JP6892177A 1977-06-13 1977-06-13 Manufacturing method of semiconductor device Expired JPS6042639B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6892177A JPS6042639B2 (en) 1977-06-13 1977-06-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6892177A JPS6042639B2 (en) 1977-06-13 1977-06-13 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS544088A true JPS544088A (en) 1979-01-12
JPS6042639B2 JPS6042639B2 (en) 1985-09-24

Family

ID=13387592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6892177A Expired JPS6042639B2 (en) 1977-06-13 1977-06-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6042639B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493221A (en) * 1978-09-16 1979-07-24 Fujimori Kogyo Co Coated metallic pipe
JPS6041281A (en) * 1984-07-20 1985-03-04 Hitachi Ltd Semiconductor laser element
JPS60167393A (en) * 1985-01-23 1985-08-30 Hitachi Ltd Semiconductor laser element
JPS60176225A (en) * 1984-02-22 1985-09-10 Matsushita Electric Ind Co Ltd Liquid-phase epitaxial crowth method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493221A (en) * 1978-09-16 1979-07-24 Fujimori Kogyo Co Coated metallic pipe
JPS60176225A (en) * 1984-02-22 1985-09-10 Matsushita Electric Ind Co Ltd Liquid-phase epitaxial crowth method
JPS6041281A (en) * 1984-07-20 1985-03-04 Hitachi Ltd Semiconductor laser element
JPS6343912B2 (en) * 1984-07-20 1988-09-01 Hitachi Ltd
JPS60167393A (en) * 1985-01-23 1985-08-30 Hitachi Ltd Semiconductor laser element

Also Published As

Publication number Publication date
JPS6042639B2 (en) 1985-09-24

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