JPS5434755A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5434755A JPS5434755A JP10049777A JP10049777A JPS5434755A JP S5434755 A JPS5434755 A JP S5434755A JP 10049777 A JP10049777 A JP 10049777A JP 10049777 A JP10049777 A JP 10049777A JP S5434755 A JPS5434755 A JP S5434755A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- substrate
- heat treatment
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To manufacture an element of low-noise characteristics by providing a non-defect layer to a substrate through a heat treatment in a non-oxidizable atmosphere.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10049777A JPS5434755A (en) | 1977-08-24 | 1977-08-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10049777A JPS5434755A (en) | 1977-08-24 | 1977-08-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5434755A true JPS5434755A (en) | 1979-03-14 |
Family
ID=14275556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10049777A Pending JPS5434755A (en) | 1977-08-24 | 1977-08-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5434755A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750426A (en) * | 1980-09-11 | 1982-03-24 | Seiko Epson Corp | Semiconductor device |
US5861556A (en) * | 1994-06-03 | 1999-01-19 | Tokyo Gas Co., Ltd. | Flowmeter |
-
1977
- 1977-08-24 JP JP10049777A patent/JPS5434755A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750426A (en) * | 1980-09-11 | 1982-03-24 | Seiko Epson Corp | Semiconductor device |
US5861556A (en) * | 1994-06-03 | 1999-01-19 | Tokyo Gas Co., Ltd. | Flowmeter |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5430777A (en) | Manufacture of semiconductor device | |
JPS53148389A (en) | Manufacture for semiconductor device | |
JPS5434755A (en) | Manufacture of semiconductor device | |
JPS5389374A (en) | Production of semiconductor device | |
JPS53115187A (en) | Semiconductor device | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS5441665A (en) | Manufacture for semiconductor device | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5419367A (en) | Production of semiconductor device | |
JPS542076A (en) | Manufacture for semiconductor device | |
JPS5219968A (en) | Semiconductor ic manufacturig process | |
JPS51112266A (en) | Semiconductor device production method | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS53142168A (en) | Reproductive use of semiconductor substrate | |
JPS5419364A (en) | Semiconductor device | |
JPS5379461A (en) | Semiconductor device and its manufacturing process | |
JPS53108373A (en) | Manufacture for semiconductor device | |
JPS5367362A (en) | Manufacture of semiconductor device | |
JPS53142870A (en) | Manufacture for semiconductor device | |
JPS53139476A (en) | Manufacture of semiconductor device | |
JPS5434784A (en) | Semiconductor integrated circuit device | |
JPS53148974A (en) | Manufacture of semiconductor device | |
JPS5428580A (en) | Manufacture of semiconductor device | |
JPS5421182A (en) | Manufacture for semiconductor device |