JPS5432184A - Forming apparatus for nitride coating - Google Patents
Forming apparatus for nitride coatingInfo
- Publication number
- JPS5432184A JPS5432184A JP9821777A JP9821777A JPS5432184A JP S5432184 A JPS5432184 A JP S5432184A JP 9821777 A JP9821777 A JP 9821777A JP 9821777 A JP9821777 A JP 9821777A JP S5432184 A JPS5432184 A JP S5432184A
- Authority
- JP
- Japan
- Prior art keywords
- nitride coating
- forming apparatus
- gas
- sample
- cpd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To provide an apparatus for forming nitride coating on a sample at a relatively low temp., by feeding activated N2 gas formed from gas plasma and a gas contg. Si cpd. separately into a reaction chamber at specific angles respectively to the sample.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9821777A JPS5432184A (en) | 1977-08-18 | 1977-08-18 | Forming apparatus for nitride coating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9821777A JPS5432184A (en) | 1977-08-18 | 1977-08-18 | Forming apparatus for nitride coating |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5432184A true JPS5432184A (en) | 1979-03-09 |
JPS5442956B2 JPS5442956B2 (en) | 1979-12-17 |
Family
ID=14213795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9821777A Granted JPS5432184A (en) | 1977-08-18 | 1977-08-18 | Forming apparatus for nitride coating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5432184A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0120307A2 (en) * | 1983-02-25 | 1984-10-03 | Toyota Jidosha Kabushiki Kaisha | Apparatus and method for plasma treatment of resin material |
JPS63104340A (en) * | 1986-10-20 | 1988-05-09 | Nec Corp | Method for forming silicon nitride film |
JPH0617232A (en) * | 1991-11-07 | 1994-01-25 | Hankuk Shinchoru Gankisuru Yongjohabu | Si/zn two-layer galvanized steel sheet excellent in corrosion resistance and having beautiful appearance and its production |
WO1995019456A1 (en) * | 1994-01-14 | 1995-07-20 | Universite Des Sciences Et Technologies De Lille | Method for depositing a film consisting of a metal or semi-metal and an oxide thereof |
EP0725163A3 (en) * | 1995-02-03 | 1997-05-21 | Sharp Kk | Line plasma vapor phase deposition apparatus and method |
WO2002012587A3 (en) * | 2000-08-08 | 2003-03-20 | Tokyo Electron Ltd | Processing apparatus and cleaning method |
-
1977
- 1977-08-18 JP JP9821777A patent/JPS5432184A/en active Granted
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0120307A2 (en) * | 1983-02-25 | 1984-10-03 | Toyota Jidosha Kabushiki Kaisha | Apparatus and method for plasma treatment of resin material |
EP0120307A3 (en) * | 1983-02-25 | 1989-05-03 | Toyota Jidosha Kabushiki Kaisha | Apparatus and method for plasma treatment of resin material |
JPS63104340A (en) * | 1986-10-20 | 1988-05-09 | Nec Corp | Method for forming silicon nitride film |
JPH0617232A (en) * | 1991-11-07 | 1994-01-25 | Hankuk Shinchoru Gankisuru Yongjohabu | Si/zn two-layer galvanized steel sheet excellent in corrosion resistance and having beautiful appearance and its production |
JPH0762237B2 (en) * | 1991-11-07 | 1995-07-05 | ハングックシンチョルガンキスルヨングジョハブ | Method for producing Si / Zn double-layer plated steel sheet with excellent corrosion resistance and beautiful appearance |
WO1995019456A1 (en) * | 1994-01-14 | 1995-07-20 | Universite Des Sciences Et Technologies De Lille | Method for depositing a film consisting of a metal or semi-metal and an oxide thereof |
FR2715168A1 (en) * | 1994-01-14 | 1995-07-21 | Univ Lille Sciences Tech | Method for depositing, at room temperature, a layer of metal or semi-metal and their oxide on a substrate. |
EP0725163A3 (en) * | 1995-02-03 | 1997-05-21 | Sharp Kk | Line plasma vapor phase deposition apparatus and method |
US5908565A (en) * | 1995-02-03 | 1999-06-01 | Sharp Kabushiki Kaisha | Line plasma vapor phase deposition apparatus and method |
WO2002012587A3 (en) * | 2000-08-08 | 2003-03-20 | Tokyo Electron Ltd | Processing apparatus and cleaning method |
Also Published As
Publication number | Publication date |
---|---|
JPS5442956B2 (en) | 1979-12-17 |
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