JPS5422787A - Structure of semiconductor element - Google Patents
Structure of semiconductor elementInfo
- Publication number
- JPS5422787A JPS5422787A JP8808477A JP8808477A JPS5422787A JP S5422787 A JPS5422787 A JP S5422787A JP 8808477 A JP8808477 A JP 8808477A JP 8808477 A JP8808477 A JP 8808477A JP S5422787 A JPS5422787 A JP S5422787A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- anode oxide
- semiconductor element
- parfect
- driv
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To eliminate the leak current completely by concentrating the element driv-ing current only to the stripe structure part by covering the anode oxide film provided to the semiconductor laser element with the protective insulator film which is formed through the electron beam deposition method at a lower temperature to parfect the insulation of the anode oxide film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8808477A JPS5422787A (en) | 1977-07-21 | 1977-07-21 | Structure of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8808477A JPS5422787A (en) | 1977-07-21 | 1977-07-21 | Structure of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5422787A true JPS5422787A (en) | 1979-02-20 |
Family
ID=13932988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8808477A Pending JPS5422787A (en) | 1977-07-21 | 1977-07-21 | Structure of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5422787A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871669A (en) * | 1981-10-23 | 1983-04-28 | Nec Corp | Both surfaces light emission type light emitting diode |
JPS5886782A (en) * | 1981-11-19 | 1983-05-24 | Nec Corp | Semiconductor light emitting diode element |
JPS60142583A (en) * | 1983-12-29 | 1985-07-27 | Fujitsu Ltd | Manufacture of pbsnte laser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140284A (en) * | 1974-04-27 | 1975-11-10 | ||
JPS5111379A (en) * | 1974-07-17 | 1976-01-29 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
-
1977
- 1977-07-21 JP JP8808477A patent/JPS5422787A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140284A (en) * | 1974-04-27 | 1975-11-10 | ||
JPS5111379A (en) * | 1974-07-17 | 1976-01-29 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871669A (en) * | 1981-10-23 | 1983-04-28 | Nec Corp | Both surfaces light emission type light emitting diode |
JPS5886782A (en) * | 1981-11-19 | 1983-05-24 | Nec Corp | Semiconductor light emitting diode element |
JPS60142583A (en) * | 1983-12-29 | 1985-07-27 | Fujitsu Ltd | Manufacture of pbsnte laser |
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