JPS5422787A - Structure of semiconductor element - Google Patents

Structure of semiconductor element

Info

Publication number
JPS5422787A
JPS5422787A JP8808477A JP8808477A JPS5422787A JP S5422787 A JPS5422787 A JP S5422787A JP 8808477 A JP8808477 A JP 8808477A JP 8808477 A JP8808477 A JP 8808477A JP S5422787 A JPS5422787 A JP S5422787A
Authority
JP
Japan
Prior art keywords
oxide film
anode oxide
semiconductor element
parfect
driv
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8808477A
Other languages
Japanese (ja)
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8808477A priority Critical patent/JPS5422787A/en
Publication of JPS5422787A publication Critical patent/JPS5422787A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To eliminate the leak current completely by concentrating the element driv-ing current only to the stripe structure part by covering the anode oxide film provided to the semiconductor laser element with the protective insulator film which is formed through the electron beam deposition method at a lower temperature to parfect the insulation of the anode oxide film.
COPYRIGHT: (C)1979,JPO&Japio
JP8808477A 1977-07-21 1977-07-21 Structure of semiconductor element Pending JPS5422787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8808477A JPS5422787A (en) 1977-07-21 1977-07-21 Structure of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8808477A JPS5422787A (en) 1977-07-21 1977-07-21 Structure of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5422787A true JPS5422787A (en) 1979-02-20

Family

ID=13932988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8808477A Pending JPS5422787A (en) 1977-07-21 1977-07-21 Structure of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5422787A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871669A (en) * 1981-10-23 1983-04-28 Nec Corp Both surfaces light emission type light emitting diode
JPS5886782A (en) * 1981-11-19 1983-05-24 Nec Corp Semiconductor light emitting diode element
JPS60142583A (en) * 1983-12-29 1985-07-27 Fujitsu Ltd Manufacture of pbsnte laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140284A (en) * 1974-04-27 1975-11-10
JPS5111379A (en) * 1974-07-17 1976-01-29 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140284A (en) * 1974-04-27 1975-11-10
JPS5111379A (en) * 1974-07-17 1976-01-29 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871669A (en) * 1981-10-23 1983-04-28 Nec Corp Both surfaces light emission type light emitting diode
JPS5886782A (en) * 1981-11-19 1983-05-24 Nec Corp Semiconductor light emitting diode element
JPS60142583A (en) * 1983-12-29 1985-07-27 Fujitsu Ltd Manufacture of pbsnte laser

Similar Documents

Publication Publication Date Title
JPS5425178A (en) Manufacture for semiconductor device
JPS5422787A (en) Structure of semiconductor element
JPS542070A (en) Manufacture for semiconductor element
JPS5437594A (en) Semiconductor laser and its manufacture
JPS53137660A (en) Electron gun
JPS538575A (en) Semiconductor device
JPS5429092A (en) Constitution of cable joint
JPS57126184A (en) Manufacture of upper electrode in josephson element
JPS5358769A (en) Ion injector
JPS53102669A (en) Manufacture for semiconductor device
JPS556855A (en) Heat sensitive thyristor
JPS5396793A (en) Proton radiation type stripe laser element
JPS5428584A (en) Manufacture of semiconductor laser element
JPS52123864A (en) Cathode ray tube
JPS5299762A (en) Electric field radiation type cathode
JPS5296394A (en) Insulating tube for power
JPS5350614A (en) Pick up tube target
JPS5386581A (en) Producton of mesa type diode
JPS5376668A (en) X-ray exposure method
JPS5248969A (en) Fluorescent dispaly tube
JPS5312272A (en) Glass covering method of semiconductor element
JPS51112165A (en) Direct heat type thermal electron emision cathode
JPS52109878A (en) Observing method of electron beam image
JPS5422185A (en) Current stenosis type planar semiconductor laser
JPS5544757A (en) Photo-thyristor