JPS54158164A - Manufacture of multi-component 3-5 group compound semiconductor crystal - Google Patents
Manufacture of multi-component 3-5 group compound semiconductor crystalInfo
- Publication number
- JPS54158164A JPS54158164A JP6698678A JP6698678A JPS54158164A JP S54158164 A JPS54158164 A JP S54158164A JP 6698678 A JP6698678 A JP 6698678A JP 6698678 A JP6698678 A JP 6698678A JP S54158164 A JPS54158164 A JP S54158164A
- Authority
- JP
- Japan
- Prior art keywords
- group
- vapor pressure
- compound semiconductor
- component
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain the crystal in a highly efficient way by putting the low vapor pressure III- group element into the minor chamber of the container and then enclosing it into the reaction tube along with the high vapor pressure V-group element to be heated up and then cooled down.
CONSTITUTION: More than two types of the III-group elements featuring a low vapor pressure among the multi-component III-V group compound semiconductor component element are put into container 2 containing minor chamber 1, and then vacuum-sealed up hermetically into reaction tube 4 along with V-group element 3 featuring a high vapor pressure. Then chamber 1 is heated up to the compound temperature of the multi-component III-V group compound, and the low temperature part of tube 4 is controlled so that the vapor pressure of the V-group element within the tube may be increased by the decomposition vapor of the V-group element obtained from the compound semiconductor solution of the compound temperature. After end of compounding the desired semiconductor, the temperature is lowered down to take these elements out of the tube. In such way, the multi-component III-V group compound semiconductor can be obtained from the elements, featuring difference segregation coefficients in the desired composition ratio, shape and size each and with omission of the braking and cutting processes for the material crystal.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6698678A JPS54158164A (en) | 1978-06-02 | 1978-06-02 | Manufacture of multi-component 3-5 group compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6698678A JPS54158164A (en) | 1978-06-02 | 1978-06-02 | Manufacture of multi-component 3-5 group compound semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54158164A true JPS54158164A (en) | 1979-12-13 |
| JPS566140B2 JPS566140B2 (en) | 1981-02-09 |
Family
ID=13331838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6698678A Granted JPS54158164A (en) | 1978-06-02 | 1978-06-02 | Manufacture of multi-component 3-5 group compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54158164A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57198622A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Liquid phase epitaxial growth |
-
1978
- 1978-06-02 JP JP6698678A patent/JPS54158164A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57198622A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Liquid phase epitaxial growth |
| JPH0412021B2 (en) * | 1981-06-01 | 1992-03-03 | Fujitsu Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS566140B2 (en) | 1981-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0543009A4 (en) | Process for purifying nitrogen trifluoride gas. | |
| JPS54158164A (en) | Manufacture of multi-component 3-5 group compound semiconductor crystal | |
| GB1467860A (en) | Monocrystalline semiconductor rods | |
| US3353912A (en) | Preparation of high-purity materials | |
| JPS5520765A (en) | Method of obtaining highly pure alpha*alpha** dinitrooanthraquinone | |
| JPS5625902A (en) | Tungsten material | |
| JPS5515722A (en) | Production of whipped cream | |
| JPS5526635A (en) | Compound semiconductor crystal growth method | |
| JPS521203A (en) | Manufacturing method of rotor material of rotor unit | |
| JPS5560087A (en) | Semiconductor material refining method | |
| JPS6469510A (en) | Production of high-purity si-b alloy | |
| JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
| JPS56114893A (en) | Refining of compound semiconductor | |
| JPS5520232A (en) | Production of 3-5 group compound crystal | |
| JPS5569204A (en) | Production of germanium-gallium alloy particle | |
| JPS5212146A (en) | Process for preparation of p- acetylaminobenzene-sufonylchloride | |
| JPS5756397A (en) | Manufacture of single crystal | |
| JPS55125683A (en) | Manufacture of 3-5 group compound to 2-6 group compound photoelectric converter | |
| JPS54104773A (en) | Growth method and its unit for semiconductor crystal | |
| JPS53111067A (en) | Continuous preparation of imidazoline compounds | |
| JPS54158166A (en) | Vapor growth method for compound semiconductor crystal | |
| JPS57123889A (en) | Preparation of single crystal | |
| JPS577896A (en) | Manufacture of single crystal | |
| JPS5447900A (en) | Vapor phase growth method for group 3-5 compound semiconductor | |
| JPS55130808A (en) | Manufacture of gallium phosphide |