JPS54153545A - Surface acoustic wave device element - Google Patents
Surface acoustic wave device elementInfo
- Publication number
- JPS54153545A JPS54153545A JP6266978A JP6266978A JPS54153545A JP S54153545 A JPS54153545 A JP S54153545A JP 6266978 A JP6266978 A JP 6266978A JP 6266978 A JP6266978 A JP 6266978A JP S54153545 A JPS54153545 A JP S54153545A
- Authority
- JP
- Japan
- Prior art keywords
- device element
- surface acoustic
- conductive layer
- acoustic wave
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To establish the surface acoustic device element excellent in the high frequency performance with low cost. CONSTITUTION:The crossing comb type electrode 22 is formed on the piezoelectric substrate 2 with Al, and the SiO2 film 23 is formed on it as the insulation film, and further, the conductive layer 24 made of Al is formed. Next, after forming holes 25 to perform wire-bonding on the input and output terminals and ground terminals of the transducer with photo etching method, the part on the comb type electrode of the conductive layer 24 is removed. After that, the wire bonding is made with Al or the like, and the device element is sealed with mold resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6266978A JPS54153545A (en) | 1978-05-24 | 1978-05-24 | Surface acoustic wave device element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6266978A JPS54153545A (en) | 1978-05-24 | 1978-05-24 | Surface acoustic wave device element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54153545A true JPS54153545A (en) | 1979-12-03 |
Family
ID=13206923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6266978A Pending JPS54153545A (en) | 1978-05-24 | 1978-05-24 | Surface acoustic wave device element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54153545A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408731A (en) * | 1992-11-05 | 1995-04-25 | Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement | Process for the manufacture of integrated capacitive transducers |
-
1978
- 1978-05-24 JP JP6266978A patent/JPS54153545A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408731A (en) * | 1992-11-05 | 1995-04-25 | Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement | Process for the manufacture of integrated capacitive transducers |
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