JPS54140478A - Plasma process method for film composed mainly of aluminum - Google Patents
Plasma process method for film composed mainly of aluminumInfo
- Publication number
- JPS54140478A JPS54140478A JP4778478A JP4778478A JPS54140478A JP S54140478 A JPS54140478 A JP S54140478A JP 4778478 A JP4778478 A JP 4778478A JP 4778478 A JP4778478 A JP 4778478A JP S54140478 A JPS54140478 A JP S54140478A
- Authority
- JP
- Japan
- Prior art keywords
- film
- torr
- aluminum
- corrosion
- cause
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To avoid completely the corrosion of the Al film by giving the plasma etching to the Al film containing copper and then coating the Al film with the plasma polymer organic film in a simple process.
CONSTITUTION: The test sample in that resist mask 9 is attached to electrode wiring 8 containing Al or Al-Cu is put on stage 2, and C and Cl45 are introduced in to cause the glow discharge between electrode 2 and 4 with about 0.5 torr and then to etch away exposed part 10. Then the exhaustion is given down to 10-2 torr or less, and ethylene gas 6 is introduced in to cause the glow discharge with about 1 torr. Thus, plasma polymer organic film 11 of less than several μ is formed on Al film 8. As film 11 is formed dense and uniform on the surface of the sample, the water permeation into the air can be prevented completely and with no production of HCl by Cl2 and water. As a result, no corrosion is caused to the copper within Al as well as to Al itself.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4778478A JPS54140478A (en) | 1978-04-24 | 1978-04-24 | Plasma process method for film composed mainly of aluminum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4778478A JPS54140478A (en) | 1978-04-24 | 1978-04-24 | Plasma process method for film composed mainly of aluminum |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54140478A true JPS54140478A (en) | 1979-10-31 |
Family
ID=12784990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4778478A Pending JPS54140478A (en) | 1978-04-24 | 1978-04-24 | Plasma process method for film composed mainly of aluminum |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54140478A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4372807A (en) * | 1982-03-25 | 1983-02-08 | Rca Corporation | Plasma etching of aluminum |
JPS6098626A (en) * | 1983-11-02 | 1985-06-01 | Oki Electric Ind Co Ltd | Surface treating method of semiconductor layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944797A (en) * | 1972-06-19 | 1974-04-27 |
-
1978
- 1978-04-24 JP JP4778478A patent/JPS54140478A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944797A (en) * | 1972-06-19 | 1974-04-27 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4372807A (en) * | 1982-03-25 | 1983-02-08 | Rca Corporation | Plasma etching of aluminum |
JPS6098626A (en) * | 1983-11-02 | 1985-06-01 | Oki Electric Ind Co Ltd | Surface treating method of semiconductor layer |
JPH0329173B2 (en) * | 1983-11-02 | 1991-04-23 | Oki Electric Ind Co Ltd |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56158873A (en) | Dry etching method | |
KR950021173A (en) | How to Clean the Etching Chamber of Dry Etching Equipment | |
JPS57170534A (en) | Dry etching method for aluminum and aluminum alloy | |
JPS5684476A (en) | Etching method of gas plasma | |
JPS54140478A (en) | Plasma process method for film composed mainly of aluminum | |
JPS5587438A (en) | Manufacture of semiconductor device | |
JPS5587435A (en) | Method of producing semiconductor device | |
JPS642325A (en) | Removal of resist | |
JPS5469090A (en) | Manufacture of semiconductor device | |
JPS5511167A (en) | Dry etching method | |
JPS5569264A (en) | Etching method | |
JPS572585A (en) | Forming method for aluminum electrode | |
JPS57141642A (en) | Formation of pattern | |
JPS579878A (en) | Plasma etching method and apparatus | |
JPS5625972A (en) | Etching treatment by plasma | |
JPS57124439A (en) | Manufacture of semiconductor device | |
JPS57135836A (en) | Glow discharge treatment | |
JPS563680A (en) | Etching method | |
JPS5457982A (en) | Manufacture for semiconductor device | |
JPS52151558A (en) | Manufacture of luminous screen | |
JPS563679A (en) | Formation of metallic pattern | |
JPS51134559A (en) | Color cathode ray tube fluorescent reflection surface forming process | |
JPS5276761A (en) | Manufacturing method of heat pipe | |
JPS6486521A (en) | Dry etching | |
JPS5469074A (en) | Plasma etching method |