JPS54140478A - Plasma process method for film composed mainly of aluminum - Google Patents

Plasma process method for film composed mainly of aluminum

Info

Publication number
JPS54140478A
JPS54140478A JP4778478A JP4778478A JPS54140478A JP S54140478 A JPS54140478 A JP S54140478A JP 4778478 A JP4778478 A JP 4778478A JP 4778478 A JP4778478 A JP 4778478A JP S54140478 A JPS54140478 A JP S54140478A
Authority
JP
Japan
Prior art keywords
film
torr
aluminum
corrosion
cause
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4778478A
Other languages
Japanese (ja)
Inventor
Yoshimichi Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4778478A priority Critical patent/JPS54140478A/en
Publication of JPS54140478A publication Critical patent/JPS54140478A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To avoid completely the corrosion of the Al film by giving the plasma etching to the Al film containing copper and then coating the Al film with the plasma polymer organic film in a simple process.
CONSTITUTION: The test sample in that resist mask 9 is attached to electrode wiring 8 containing Al or Al-Cu is put on stage 2, and C and Cl45 are introduced in to cause the glow discharge between electrode 2 and 4 with about 0.5 torr and then to etch away exposed part 10. Then the exhaustion is given down to 10-2 torr or less, and ethylene gas 6 is introduced in to cause the glow discharge with about 1 torr. Thus, plasma polymer organic film 11 of less than several μ is formed on Al film 8. As film 11 is formed dense and uniform on the surface of the sample, the water permeation into the air can be prevented completely and with no production of HCl by Cl2 and water. As a result, no corrosion is caused to the copper within Al as well as to Al itself.
COPYRIGHT: (C)1979,JPO&Japio
JP4778478A 1978-04-24 1978-04-24 Plasma process method for film composed mainly of aluminum Pending JPS54140478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4778478A JPS54140478A (en) 1978-04-24 1978-04-24 Plasma process method for film composed mainly of aluminum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4778478A JPS54140478A (en) 1978-04-24 1978-04-24 Plasma process method for film composed mainly of aluminum

Publications (1)

Publication Number Publication Date
JPS54140478A true JPS54140478A (en) 1979-10-31

Family

ID=12784990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4778478A Pending JPS54140478A (en) 1978-04-24 1978-04-24 Plasma process method for film composed mainly of aluminum

Country Status (1)

Country Link
JP (1) JPS54140478A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
JPS6098626A (en) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd Surface treating method of semiconductor layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944797A (en) * 1972-06-19 1974-04-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944797A (en) * 1972-06-19 1974-04-27

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
JPS6098626A (en) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd Surface treating method of semiconductor layer
JPH0329173B2 (en) * 1983-11-02 1991-04-23 Oki Electric Ind Co Ltd

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