JPS54128684A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS54128684A
JPS54128684A JP3609878A JP3609878A JPS54128684A JP S54128684 A JPS54128684 A JP S54128684A JP 3609878 A JP3609878 A JP 3609878A JP 3609878 A JP3609878 A JP 3609878A JP S54128684 A JPS54128684 A JP S54128684A
Authority
JP
Japan
Prior art keywords
electrode
substrate
conduction type
electrodes
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3609878A
Other languages
Japanese (ja)
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3609878A priority Critical patent/JPS54128684A/en
Publication of JPS54128684A publication Critical patent/JPS54128684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain the signal charge having second power characteristics to the input signal, by causing the charge having non-linear relation, through a given shape of the well of potential corresponding to the gradient of potential given to the resistive electrodes. CONSTITUTION:On the one conduction type semiconductor substrate 1, the resistive electrode 4 is provided via the insulation film 11, and the input electrode 3 is formed close to it. Further, at the opposite side of the electrode 3, the transfer electrodes 5 to 9 are sequentially attached near the electrode 4, and in contact with the electrode 3 in the substrate 1, the opposite conduction type source region 2 and the channel block region 10 having high impurity concentration of the same conduction type as the substrate 1 at the end of the substrate 1 are respectively formed by diffusion. Further, at the both ends of the electrode 4, low resistance electrodes 4a and 4b are placed while positioning on the region 10, and different voltage is fed between the both ends of the resistor part 4c caused between them. With this constitution, the resistance between the both ends of the electrode 4 is selected from several hundreds ohms to several tens of kiloohms to cause the potential well 12 having a slope under the resistor section 4c.
JP3609878A 1978-03-30 1978-03-30 Charge transfer device Pending JPS54128684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3609878A JPS54128684A (en) 1978-03-30 1978-03-30 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3609878A JPS54128684A (en) 1978-03-30 1978-03-30 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS54128684A true JPS54128684A (en) 1979-10-05

Family

ID=12460283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3609878A Pending JPS54128684A (en) 1978-03-30 1978-03-30 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS54128684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54130852A (en) * 1978-03-31 1979-10-11 Fujitsu Ltd Charge coupled operation device
JPS54154239A (en) * 1978-05-26 1979-12-05 Fujitsu Ltd Charge-coupled arithmetic unit
US5442207A (en) * 1993-08-18 1995-08-15 Goldstar Electron Co., Ltd. Charge coupled device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54130852A (en) * 1978-03-31 1979-10-11 Fujitsu Ltd Charge coupled operation device
JPS5637640B2 (en) * 1978-03-31 1981-09-01
JPS54154239A (en) * 1978-05-26 1979-12-05 Fujitsu Ltd Charge-coupled arithmetic unit
JPS57599B2 (en) * 1978-05-26 1982-01-07
US5442207A (en) * 1993-08-18 1995-08-15 Goldstar Electron Co., Ltd. Charge coupled device
US5607872A (en) * 1993-08-18 1997-03-04 Lg Semicon Co., Ltd. Method of fabricating charge coupled device

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