JPS54128293A - Manufacture of semiconductor device especially for insulator gate type semiconductor device - Google Patents
Manufacture of semiconductor device especially for insulator gate type semiconductor deviceInfo
- Publication number
- JPS54128293A JPS54128293A JP3552078A JP3552078A JPS54128293A JP S54128293 A JPS54128293 A JP S54128293A JP 3552078 A JP3552078 A JP 3552078A JP 3552078 A JP3552078 A JP 3552078A JP S54128293 A JPS54128293 A JP S54128293A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- semiconductor device
- sio
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To increase the degree of integration regardless of the mask matching tolerance by forming the channel stopper layer of high impurity density plus the source and drain regions via the self-matching method.
CONSTITUTION: SiO2 film 2, poly-crystal Si layer 3, Si3N4 film 4 and SiO2 film 5 are laminated on P-type Si substrate 1. Then exposed film 5 and then film 4 are removed through the plasma etching with photo resist layer 6 used as the mask. Layer 6 is left as it is, and the P-type impurity ion is injected through layer 3 and film 2 to form P+-type channel stopper layer 7. The width of film 4 is then decreased through etching with film 5 used as the mask. After this, layer 6 and film 5 are removed, and the oxidation is given to layer 3 reaching up to film 2. Thus, layer 3 is converted into thick field SiO2 layer 8, and then film 4 and layer 3 are removed to form opening 9 there. Gate SiO2 film 11 and poly-crystal Si gate electrode 12 are formed within opening 9, and N-type source and drain regions 13 and 14 are formed by diffusion at both sides of the electrode.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3552078A JPS54128293A (en) | 1978-03-29 | 1978-03-29 | Manufacture of semiconductor device especially for insulator gate type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3552078A JPS54128293A (en) | 1978-03-29 | 1978-03-29 | Manufacture of semiconductor device especially for insulator gate type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54128293A true JPS54128293A (en) | 1979-10-04 |
Family
ID=12444017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3552078A Pending JPS54128293A (en) | 1978-03-29 | 1978-03-29 | Manufacture of semiconductor device especially for insulator gate type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54128293A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5169372A (en) * | 1974-11-06 | 1976-06-15 | Ibm | |
JPS52128084A (en) * | 1976-04-20 | 1977-10-27 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor ic unit |
-
1978
- 1978-03-29 JP JP3552078A patent/JPS54128293A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5169372A (en) * | 1974-11-06 | 1976-06-15 | Ibm | |
JPS52128084A (en) * | 1976-04-20 | 1977-10-27 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor ic unit |
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