JPS54128293A - Manufacture of semiconductor device especially for insulator gate type semiconductor device - Google Patents

Manufacture of semiconductor device especially for insulator gate type semiconductor device

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Publication number
JPS54128293A
JPS54128293A JP3552078A JP3552078A JPS54128293A JP S54128293 A JPS54128293 A JP S54128293A JP 3552078 A JP3552078 A JP 3552078A JP 3552078 A JP3552078 A JP 3552078A JP S54128293 A JPS54128293 A JP S54128293A
Authority
JP
Japan
Prior art keywords
film
layer
semiconductor device
sio
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3552078A
Other languages
Japanese (ja)
Inventor
Hideo Miyazaki
Kiyoshi Honma
Koji Usuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3552078A priority Critical patent/JPS54128293A/en
Publication of JPS54128293A publication Critical patent/JPS54128293A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To increase the degree of integration regardless of the mask matching tolerance by forming the channel stopper layer of high impurity density plus the source and drain regions via the self-matching method.
CONSTITUTION: SiO2 film 2, poly-crystal Si layer 3, Si3N4 film 4 and SiO2 film 5 are laminated on P-type Si substrate 1. Then exposed film 5 and then film 4 are removed through the plasma etching with photo resist layer 6 used as the mask. Layer 6 is left as it is, and the P-type impurity ion is injected through layer 3 and film 2 to form P+-type channel stopper layer 7. The width of film 4 is then decreased through etching with film 5 used as the mask. After this, layer 6 and film 5 are removed, and the oxidation is given to layer 3 reaching up to film 2. Thus, layer 3 is converted into thick field SiO2 layer 8, and then film 4 and layer 3 are removed to form opening 9 there. Gate SiO2 film 11 and poly-crystal Si gate electrode 12 are formed within opening 9, and N-type source and drain regions 13 and 14 are formed by diffusion at both sides of the electrode.
COPYRIGHT: (C)1979,JPO&Japio
JP3552078A 1978-03-29 1978-03-29 Manufacture of semiconductor device especially for insulator gate type semiconductor device Pending JPS54128293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3552078A JPS54128293A (en) 1978-03-29 1978-03-29 Manufacture of semiconductor device especially for insulator gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3552078A JPS54128293A (en) 1978-03-29 1978-03-29 Manufacture of semiconductor device especially for insulator gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPS54128293A true JPS54128293A (en) 1979-10-04

Family

ID=12444017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3552078A Pending JPS54128293A (en) 1978-03-29 1978-03-29 Manufacture of semiconductor device especially for insulator gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS54128293A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169372A (en) * 1974-11-06 1976-06-15 Ibm
JPS52128084A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor ic unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169372A (en) * 1974-11-06 1976-06-15 Ibm
JPS52128084A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor ic unit

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