JPS54126479A - Signal charge injection system of charge coupled device - Google Patents

Signal charge injection system of charge coupled device

Info

Publication number
JPS54126479A
JPS54126479A JP3361178A JP3361178A JPS54126479A JP S54126479 A JPS54126479 A JP S54126479A JP 3361178 A JP3361178 A JP 3361178A JP 3361178 A JP3361178 A JP 3361178A JP S54126479 A JPS54126479 A JP S54126479A
Authority
JP
Japan
Prior art keywords
pulse
charge
capacitor
switch
shaver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3361178A
Other languages
Japanese (ja)
Inventor
Yoshitaka Katayama
Daiki Nabeshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3361178A priority Critical patent/JPS54126479A/en
Publication of JPS54126479A publication Critical patent/JPS54126479A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To eliminate the distortion of signal charge to avoid the deterioration of frequency characteristic by adding a function, by which one of the leading edge and the trailing edge of a pulse applied to an input gate electrode, at least, is dulled, to a CCD. CONSTITUTION:Pulse shaver 33 is added to input gate electrode 32 constituting a CCD, and driving pulses are applied to electrode 32 through this pulse shaver 33. This shaver 33 is constituted by constant-voltage source 41, variable resistor 42, switch 43, capacitor 44, control box 45, etc.,; and when switch 43 is turned on, capacitor 44 is charged, and voltage at both ends become equal to the voltage of constant-voltage source 41 finally. Next, switch 43 is turned off by box 45 while adjusting the value of resistance 42, and charge of capacitor 44 is discharged instantaneously to change the leading edge of the pulse. Thus, the non-linearity between input signals and the charge quantity is eliminated to avoid the deterioration of frequency characteristic.
JP3361178A 1978-03-25 1978-03-25 Signal charge injection system of charge coupled device Pending JPS54126479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3361178A JPS54126479A (en) 1978-03-25 1978-03-25 Signal charge injection system of charge coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3361178A JPS54126479A (en) 1978-03-25 1978-03-25 Signal charge injection system of charge coupled device

Publications (1)

Publication Number Publication Date
JPS54126479A true JPS54126479A (en) 1979-10-01

Family

ID=12391247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3361178A Pending JPS54126479A (en) 1978-03-25 1978-03-25 Signal charge injection system of charge coupled device

Country Status (1)

Country Link
JP (1) JPS54126479A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065571A (en) * 1983-08-02 1985-04-15 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065571A (en) * 1983-08-02 1985-04-15 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device

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