JPS54125189A - Production of neodymium pentaphosphate single crystal - Google Patents

Production of neodymium pentaphosphate single crystal

Info

Publication number
JPS54125189A
JPS54125189A JP3387078A JP3387078A JPS54125189A JP S54125189 A JPS54125189 A JP S54125189A JP 3387078 A JP3387078 A JP 3387078A JP 3387078 A JP3387078 A JP 3387078A JP S54125189 A JPS54125189 A JP S54125189A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
lipo3
good
ndxre1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3387078A
Other languages
Japanese (ja)
Inventor
Osamu Kamata
Akimoto Serizawa
Yoshinobu Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3387078A priority Critical patent/JPS54125189A/en
Publication of JPS54125189A publication Critical patent/JPS54125189A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To produce the title single crystal of high performance for laser with good controllability by melting Nd<2>O3 or Nd2O3 and Re2O3 (Re; La, Y or Lu), LiCO3 and H3PO4, and carrying out crystallization using a formed flux LiPO3-P2O5 by a constant temp. standing method or a slow cooling method. CONSTITUTION:A NdP5O14 or (NdxRe1-x)P5O14 single crystal (where 0<x<=1 and Re; La, Y or Lu) is deposited from a melt of a compsn. Li2O-P2O5-Nd2O3 or -(NdxRe1-x)2O3. At this time, using a compsn. in LiPO3-P2O5-NdP5O3, i.e. LiPO3-P2O5 excessively added, as a flux, a good NdP5O14 single crystal is obtd. which may contain Re. The crystal is deposited at low speed by a constant temp. standing method, resulting in good crystal properties, and crystal growing rate can be controlled quantitatively by a slow cooling method.
JP3387078A 1978-03-23 1978-03-23 Production of neodymium pentaphosphate single crystal Pending JPS54125189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3387078A JPS54125189A (en) 1978-03-23 1978-03-23 Production of neodymium pentaphosphate single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3387078A JPS54125189A (en) 1978-03-23 1978-03-23 Production of neodymium pentaphosphate single crystal

Publications (1)

Publication Number Publication Date
JPS54125189A true JPS54125189A (en) 1979-09-28

Family

ID=12398538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3387078A Pending JPS54125189A (en) 1978-03-23 1978-03-23 Production of neodymium pentaphosphate single crystal

Country Status (1)

Country Link
JP (1) JPS54125189A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020733A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020733A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device
US7098992B2 (en) 1999-09-10 2006-08-29 Nikon Corporation Light source unit and wavelength stabilizing control method, exposure apparatus and exposure method, method of making exposure apparatus, and device manufacturing method and device

Similar Documents

Publication Publication Date Title
EP0390672A3 (en) Method for heat process of silicon
ATE222613T1 (en) SINGLE CRYSTAL POWDER AND MONOGRAIN MEMBRANE PRODUCTION
PT1548159E (en) PROCESS FOR PRODUCING A MONOCRYSTALINE CU PO (LN, GA) SE2 AND MONOPARTICAL MEMBRANES USED IN SOLAR CELLS CONTAINING THIS PO
JPS54125189A (en) Production of neodymium pentaphosphate single crystal
JPS538374A (en) Growing method for single crystal of semiconductor
JPS5551796A (en) Production of dichromium trioxide single crystal
JPS5413477A (en) Continuous growing apparatus for single crystal
JPS55140792A (en) Manufacture of 3-5 group compound semiconductor single crystal
JPS5435898A (en) Growing method for rare earth element gallium garnet single crystal
JPS5717496A (en) Liquid phase growing method for single crystal of compound semiconductor
JPS52149273A (en) Production of plate-shaped crystal
FR2122768A5 (en) Ruby single crystals - prodn in cold crucibles in an oxidising atmos
JP2739547B2 (en) Method for producing lithium borate single crystal
JPS5792599A (en) Production of single crystal of ferrite
JPS5560092A (en) Production of single crystal
JPS5316400A (en) Production of piezoelectric oxide single crystal
JPS56169736A (en) Preparation of high purity aluminum
JPS51136582A (en) Process for production of a semi -conductor crystal
JPS53119784A (en) Crystallizing method and apparatus for solution containing salt
JPS53119789A (en) Electric furnace for crystal growth
JPS56100147A (en) Manufacture of two-component ionic crystal optical fiber
JPS6418985A (en) Production of oxide single crystal
JPS5659696A (en) Liquid phase epitaxial growing apparatus
JPS6439320A (en) Production of permanent magnet
JPS54106080A (en) Manufacture of single crystal