JPS54101664A - Formation of liquid-phase epitaxial grown layer - Google Patents
Formation of liquid-phase epitaxial grown layerInfo
- Publication number
- JPS54101664A JPS54101664A JP814778A JP814778A JPS54101664A JP S54101664 A JPS54101664 A JP S54101664A JP 814778 A JP814778 A JP 814778A JP 814778 A JP814778 A JP 814778A JP S54101664 A JPS54101664 A JP S54101664A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- phase epitaxial
- grown layer
- epitaxial grown
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To form well a liquid-phase epitaxial grown layer consisting of InP without meltback, by making the main face of a semiconductor substrate of In1-xGax AsyP1-y in the formation method of the liquid-phase epitaxial grown layer.
CONSTITUTION: Liquid-phase epitaxial grown layer 12 consisting of In1-xGaxAsy P1-y is formed on semiconductor substrate main body 11 consisting of InP, and groove 14 is provided on upper face 13 of layer 12. Semiconductor substrate 10 produced in this manner is arranged in an inactive gas atmosphere to form liquid- phase epitaxial grown layer 15 consisting of InP on the surface of substrate 10.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP814778A JPS54101664A (en) | 1978-01-27 | 1978-01-27 | Formation of liquid-phase epitaxial grown layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP814778A JPS54101664A (en) | 1978-01-27 | 1978-01-27 | Formation of liquid-phase epitaxial grown layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54101664A true JPS54101664A (en) | 1979-08-10 |
JPS5538820B2 JPS5538820B2 (en) | 1980-10-07 |
Family
ID=11685187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP814778A Granted JPS54101664A (en) | 1978-01-27 | 1978-01-27 | Formation of liquid-phase epitaxial grown layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101664A (en) |
-
1978
- 1978-01-27 JP JP814778A patent/JPS54101664A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5538820B2 (en) | 1980-10-07 |
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