JPS5389681A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS5389681A
JPS5389681A JP395477A JP395477A JPS5389681A JP S5389681 A JPS5389681 A JP S5389681A JP 395477 A JP395477 A JP 395477A JP 395477 A JP395477 A JP 395477A JP S5389681 A JPS5389681 A JP S5389681A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mis type
layer
epitatial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP395477A
Other languages
Japanese (ja)
Inventor
Yasunobu Osa
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP395477A priority Critical patent/JPS5389681A/en
Publication of JPS5389681A publication Critical patent/JPS5389681A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the production of parasitic transistors, increase performance and produce a MIS device of high reliability by forming a p epitatial layer on a substrate whose skin part is p+ layer, and providing element active regions.
COPYRIGHT: (C)1978,JPO&Japio
JP395477A 1977-01-19 1977-01-19 Mis type semiconductor device Pending JPS5389681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP395477A JPS5389681A (en) 1977-01-19 1977-01-19 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP395477A JPS5389681A (en) 1977-01-19 1977-01-19 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5389681A true JPS5389681A (en) 1978-08-07

Family

ID=11571487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP395477A Pending JPS5389681A (en) 1977-01-19 1977-01-19 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5389681A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165381A (en) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト High withstand voltage mos transistor
JPS5984461A (en) * 1982-11-05 1984-05-16 Hitachi Ltd Semiconductor device
JPS6025271A (en) * 1983-07-21 1985-02-08 Nec Corp Insulated gate type field-effect transistor
JPS6169166A (en) * 1985-04-05 1986-04-09 Toshiba Corp Manufacture of semiconductor device
JPS61240671A (en) * 1985-04-17 1986-10-25 Sony Corp Manufacture of complementary field effect transistor
JP2009516361A (en) * 2005-10-14 2009-04-16 シリコン・スペース・テクノロジー・コーポレイション Radiation-resistant isolation structure and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165381A (en) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト High withstand voltage mos transistor
JPS5984461A (en) * 1982-11-05 1984-05-16 Hitachi Ltd Semiconductor device
JPH0459782B2 (en) * 1982-11-05 1992-09-24 Hitachi Ltd
JPS6025271A (en) * 1983-07-21 1985-02-08 Nec Corp Insulated gate type field-effect transistor
JPS6169166A (en) * 1985-04-05 1986-04-09 Toshiba Corp Manufacture of semiconductor device
JPS61240671A (en) * 1985-04-17 1986-10-25 Sony Corp Manufacture of complementary field effect transistor
JP2009516361A (en) * 2005-10-14 2009-04-16 シリコン・スペース・テクノロジー・コーポレイション Radiation-resistant isolation structure and manufacturing method thereof

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