JPS5389681A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS5389681A JPS5389681A JP395477A JP395477A JPS5389681A JP S5389681 A JPS5389681 A JP S5389681A JP 395477 A JP395477 A JP 395477A JP 395477 A JP395477 A JP 395477A JP S5389681 A JPS5389681 A JP S5389681A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- mis type
- layer
- epitatial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To prevent the production of parasitic transistors, increase performance and produce a MIS device of high reliability by forming a p epitatial layer on a substrate whose skin part is p+ layer, and providing element active regions.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP395477A JPS5389681A (en) | 1977-01-19 | 1977-01-19 | Mis type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP395477A JPS5389681A (en) | 1977-01-19 | 1977-01-19 | Mis type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5389681A true JPS5389681A (en) | 1978-08-07 |
Family
ID=11571487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP395477A Pending JPS5389681A (en) | 1977-01-19 | 1977-01-19 | Mis type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5389681A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58165381A (en) * | 1982-03-09 | 1983-09-30 | シ−メンス・アクチエンゲゼルシヤフト | High withstand voltage mos transistor |
JPS5984461A (en) * | 1982-11-05 | 1984-05-16 | Hitachi Ltd | Semiconductor device |
JPS6025271A (en) * | 1983-07-21 | 1985-02-08 | Nec Corp | Insulated gate type field-effect transistor |
JPS6169166A (en) * | 1985-04-05 | 1986-04-09 | Toshiba Corp | Manufacture of semiconductor device |
JPS61240671A (en) * | 1985-04-17 | 1986-10-25 | Sony Corp | Manufacture of complementary field effect transistor |
JP2009516361A (en) * | 2005-10-14 | 2009-04-16 | シリコン・スペース・テクノロジー・コーポレイション | Radiation-resistant isolation structure and manufacturing method thereof |
-
1977
- 1977-01-19 JP JP395477A patent/JPS5389681A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58165381A (en) * | 1982-03-09 | 1983-09-30 | シ−メンス・アクチエンゲゼルシヤフト | High withstand voltage mos transistor |
JPS5984461A (en) * | 1982-11-05 | 1984-05-16 | Hitachi Ltd | Semiconductor device |
JPH0459782B2 (en) * | 1982-11-05 | 1992-09-24 | Hitachi Ltd | |
JPS6025271A (en) * | 1983-07-21 | 1985-02-08 | Nec Corp | Insulated gate type field-effect transistor |
JPS6169166A (en) * | 1985-04-05 | 1986-04-09 | Toshiba Corp | Manufacture of semiconductor device |
JPS61240671A (en) * | 1985-04-17 | 1986-10-25 | Sony Corp | Manufacture of complementary field effect transistor |
JP2009516361A (en) * | 2005-10-14 | 2009-04-16 | シリコン・スペース・テクノロジー・コーポレイション | Radiation-resistant isolation structure and manufacturing method thereof |
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