JPS5382281A - Production of high liminance semiconductor device and its apparatus - Google Patents

Production of high liminance semiconductor device and its apparatus

Info

Publication number
JPS5382281A
JPS5382281A JP15840876A JP15840876A JPS5382281A JP S5382281 A JPS5382281 A JP S5382281A JP 15840876 A JP15840876 A JP 15840876A JP 15840876 A JP15840876 A JP 15840876A JP S5382281 A JPS5382281 A JP S5382281A
Authority
JP
Japan
Prior art keywords
liminance
production
semiconductor device
protons
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15840876A
Other languages
Japanese (ja)
Inventor
Tsuneji Motosugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15840876A priority Critical patent/JPS5382281A/en
Publication of JPS5382281A publication Critical patent/JPS5382281A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a superluminescence diode easily and accurately without requiring highly sophisticated techniques by forming non-light emitting regions through implantation of protons.
JP15840876A 1976-12-28 1976-12-28 Production of high liminance semiconductor device and its apparatus Pending JPS5382281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15840876A JPS5382281A (en) 1976-12-28 1976-12-28 Production of high liminance semiconductor device and its apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15840876A JPS5382281A (en) 1976-12-28 1976-12-28 Production of high liminance semiconductor device and its apparatus

Publications (1)

Publication Number Publication Date
JPS5382281A true JPS5382281A (en) 1978-07-20

Family

ID=15671092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15840876A Pending JPS5382281A (en) 1976-12-28 1976-12-28 Production of high liminance semiconductor device and its apparatus

Country Status (1)

Country Link
JP (1) JPS5382281A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599791A (en) * 1983-11-28 1986-07-15 At&T Bell Laboratories Method of making integrated circuits employing proton-bombarded AlGaAs layers
US4670966A (en) * 1981-09-02 1987-06-09 U.S. Philips Corporation Method of making a semiconductor laser with end zones for reducing non-radiating recombination
JPS63131586A (en) * 1986-11-21 1988-06-03 Toshiba Corp Semiconductor light-emitting device
JPH04275469A (en) * 1991-03-04 1992-10-01 Sharp Corp Manufacture of semiconductor light emitting element
KR20170021867A (en) 2014-07-30 2017-02-28 제이에프이 스틸 가부시키가이샤 Press forming method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en) * 1973-01-11 1974-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en) * 1973-01-11 1974-09-06

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670966A (en) * 1981-09-02 1987-06-09 U.S. Philips Corporation Method of making a semiconductor laser with end zones for reducing non-radiating recombination
US4599791A (en) * 1983-11-28 1986-07-15 At&T Bell Laboratories Method of making integrated circuits employing proton-bombarded AlGaAs layers
JPS63131586A (en) * 1986-11-21 1988-06-03 Toshiba Corp Semiconductor light-emitting device
JPH04275469A (en) * 1991-03-04 1992-10-01 Sharp Corp Manufacture of semiconductor light emitting element
KR20170021867A (en) 2014-07-30 2017-02-28 제이에프이 스틸 가부시키가이샤 Press forming method

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