JPS5384688A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5384688A
JPS5384688A JP15938976A JP15938976A JPS5384688A JP S5384688 A JPS5384688 A JP S5384688A JP 15938976 A JP15938976 A JP 15938976A JP 15938976 A JP15938976 A JP 15938976A JP S5384688 A JPS5384688 A JP S5384688A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
impurity
doping
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15938976A
Other languages
Japanese (ja)
Inventor
Shigeharu Abe
Hideo Tamura
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15938976A priority Critical patent/JPS5384688A/en
Publication of JPS5384688A publication Critical patent/JPS5384688A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To produce a semiconductor device of high dielectric strength by forming a base region through doping of an impurity, then forming an emitter region through doping of an impurity of conductivity type opposite from that of said impurity.
JP15938976A 1976-12-30 1976-12-30 Production of semiconductor device Pending JPS5384688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15938976A JPS5384688A (en) 1976-12-30 1976-12-30 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15938976A JPS5384688A (en) 1976-12-30 1976-12-30 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5384688A true JPS5384688A (en) 1978-07-26

Family

ID=15692709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15938976A Pending JPS5384688A (en) 1976-12-30 1976-12-30 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5384688A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110274A (en) * 1984-06-25 1986-01-17 Rohm Co Ltd Semiconductor device and manufacture thereof
JPS6320825A (en) * 1986-07-14 1988-01-28 Mitsubishi Electric Corp Diffusion method for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110274A (en) * 1984-06-25 1986-01-17 Rohm Co Ltd Semiconductor device and manufacture thereof
JPS6320825A (en) * 1986-07-14 1988-01-28 Mitsubishi Electric Corp Diffusion method for semiconductor device

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