JPS52115784A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS52115784A
JPS52115784A JP3293476A JP3293476A JPS52115784A JP S52115784 A JPS52115784 A JP S52115784A JP 3293476 A JP3293476 A JP 3293476A JP 3293476 A JP3293476 A JP 3293476A JP S52115784 A JPS52115784 A JP S52115784A
Authority
JP
Japan
Prior art keywords
epitaxial growth
liquid phase
phase epitaxial
solution
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3293476A
Other languages
Japanese (ja)
Other versions
JPS5835959B2 (en
Inventor
Shinichi Akai
Hideki Mori
Takashi Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3293476A priority Critical patent/JPS5835959B2/en
Publication of JPS52115784A publication Critical patent/JPS52115784A/en
Publication of JPS5835959B2 publication Critical patent/JPS5835959B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To give epitaxial growth of smooth surface and uniform thickness by means fo inclining the contact plane of a single crystal substrate with a raw material solution to the horizontal plane so as to make the equiconcentration plane with respect to a solute in a solution nearly horizontal with the result that the solute in the solution is made difficult to take place.
COPYRIGHT: (C)1977,JPO&Japio
JP3293476A 1976-03-24 1976-03-24 Liquid phase epitaxial growth method Expired JPS5835959B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3293476A JPS5835959B2 (en) 1976-03-24 1976-03-24 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3293476A JPS5835959B2 (en) 1976-03-24 1976-03-24 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS52115784A true JPS52115784A (en) 1977-09-28
JPS5835959B2 JPS5835959B2 (en) 1983-08-05

Family

ID=12372750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3293476A Expired JPS5835959B2 (en) 1976-03-24 1976-03-24 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5835959B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017270U (en) * 1983-07-08 1985-02-05 松井　正 spray cap
JPS6146273A (en) * 1984-08-10 1986-03-06 Japan Crown Cork Co Ltd Foaming or atomizing discharge vessel

Also Published As

Publication number Publication date
JPS5835959B2 (en) 1983-08-05

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