JPS5381116A - Radiation sensitive polymer and its working method - Google Patents
Radiation sensitive polymer and its working methodInfo
- Publication number
- JPS5381116A JPS5381116A JP15703776A JP15703776A JPS5381116A JP S5381116 A JPS5381116 A JP S5381116A JP 15703776 A JP15703776 A JP 15703776A JP 15703776 A JP15703776 A JP 15703776A JP S5381116 A JPS5381116 A JP S5381116A
- Authority
- JP
- Japan
- Prior art keywords
- working method
- radiation sensitive
- sensitive polymer
- polymer
- working
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To radiate high energy beams on a resist material for working a mask and to form a positive image of high sensitivity and high resolution, by heat-treating a tertiary butyl methacrylate (co) polymer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15703776A JPS5381116A (en) | 1976-12-25 | 1976-12-25 | Radiation sensitive polymer and its working method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15703776A JPS5381116A (en) | 1976-12-25 | 1976-12-25 | Radiation sensitive polymer and its working method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5381116A true JPS5381116A (en) | 1978-07-18 |
JPS5528056B2 JPS5528056B2 (en) | 1980-07-25 |
Family
ID=15640803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15703776A Granted JPS5381116A (en) | 1976-12-25 | 1976-12-25 | Radiation sensitive polymer and its working method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5381116A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5466776A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Fine pattern forming method |
JPS5639539A (en) * | 1979-09-07 | 1981-04-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Pattern forming method |
EP0102450A2 (en) * | 1982-08-23 | 1984-03-14 | International Business Machines Corporation | Resist compositions |
US4745124A (en) * | 1978-09-11 | 1988-05-17 | University Of Miami | Orally effective anti-hypertensive agents |
EP0608983A1 (en) * | 1993-01-25 | 1994-08-03 | AT&T Corp. | A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers |
US5384220A (en) * | 1990-12-20 | 1995-01-24 | Siemens Aktiengesellschaft | Production of photolithographic structures |
US6110637A (en) * | 1990-12-20 | 2000-08-29 | Siemens Aktinegesellschaft | Photoresists which are suitable for producing sub-micron size structures |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5050041A (en) * | 1973-09-03 | 1975-05-06 | ||
JPS512430A (en) * | 1974-05-28 | 1976-01-10 | Ibm | Mechiru isopuchiru ketongenzozai |
US3984582A (en) * | 1975-06-30 | 1976-10-05 | Ibm | Method for preparing positive resist image |
-
1976
- 1976-12-25 JP JP15703776A patent/JPS5381116A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5050041A (en) * | 1973-09-03 | 1975-05-06 | ||
JPS512430A (en) * | 1974-05-28 | 1976-01-10 | Ibm | Mechiru isopuchiru ketongenzozai |
US3984582A (en) * | 1975-06-30 | 1976-10-05 | Ibm | Method for preparing positive resist image |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5466776A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Fine pattern forming method |
JPS5713864B2 (en) * | 1977-11-07 | 1982-03-19 | ||
US4745124A (en) * | 1978-09-11 | 1988-05-17 | University Of Miami | Orally effective anti-hypertensive agents |
JPS5639539A (en) * | 1979-09-07 | 1981-04-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Pattern forming method |
EP0102450A2 (en) * | 1982-08-23 | 1984-03-14 | International Business Machines Corporation | Resist compositions |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
EP0102450A3 (en) * | 1982-08-23 | 1986-10-15 | International Business Machines Corporation | Resist compositions |
US5384220A (en) * | 1990-12-20 | 1995-01-24 | Siemens Aktiengesellschaft | Production of photolithographic structures |
US6110637A (en) * | 1990-12-20 | 2000-08-29 | Siemens Aktinegesellschaft | Photoresists which are suitable for producing sub-micron size structures |
EP0608983A1 (en) * | 1993-01-25 | 1994-08-03 | AT&T Corp. | A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers |
US5385809A (en) * | 1993-01-25 | 1995-01-31 | At&T Corp. | Process for fabricating a device utilizing partially deprotected resist polymers |
US5691110A (en) * | 1993-01-25 | 1997-11-25 | Lucent Technologies Inc. | Process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers |
Also Published As
Publication number | Publication date |
---|---|
JPS5528056B2 (en) | 1980-07-25 |
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