JPS5376769A - Simiconductor device - Google Patents

Simiconductor device

Info

Publication number
JPS5376769A
JPS5376769A JP15193976A JP15193976A JPS5376769A JP S5376769 A JPS5376769 A JP S5376769A JP 15193976 A JP15193976 A JP 15193976A JP 15193976 A JP15193976 A JP 15193976A JP S5376769 A JPS5376769 A JP S5376769A
Authority
JP
Japan
Prior art keywords
simiconductor
simiconductor device
directionon
distortions
designing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15193976A
Other languages
Japanese (ja)
Inventor
Shinji Onga
Kazumichi Omura
Yukio Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15193976A priority Critical patent/JPS5376769A/en
Publication of JPS5376769A publication Critical patent/JPS5376769A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a MOS device of improved mobility by designing the channel directionon a Si layer of (110) face in a [001] direction and applying uniaxial tensile distortions to the element.
COPYRIGHT: (C)1978,JPO&Japio
JP15193976A 1976-12-20 1976-12-20 Simiconductor device Pending JPS5376769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15193976A JPS5376769A (en) 1976-12-20 1976-12-20 Simiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15193976A JPS5376769A (en) 1976-12-20 1976-12-20 Simiconductor device

Publications (1)

Publication Number Publication Date
JPS5376769A true JPS5376769A (en) 1978-07-07

Family

ID=15529499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15193976A Pending JPS5376769A (en) 1976-12-20 1976-12-20 Simiconductor device

Country Status (1)

Country Link
JP (1) JPS5376769A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132975A (en) * 1982-02-03 1983-08-08 Hitachi Ltd Semiconductor device and preparation thereof
WO2000060671A1 (en) * 1999-03-30 2000-10-12 Hitachi, Ltd. Semiconductor device and semiconductor substrate
JP2015084427A (en) * 2014-11-24 2015-04-30 株式会社半導体エネルギー研究所 Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132975A (en) * 1982-02-03 1983-08-08 Hitachi Ltd Semiconductor device and preparation thereof
WO2000060671A1 (en) * 1999-03-30 2000-10-12 Hitachi, Ltd. Semiconductor device and semiconductor substrate
JP2000286418A (en) * 1999-03-30 2000-10-13 Hitachi Ltd Semiconductor device and semiconductor substrate
KR100447492B1 (en) * 1999-03-30 2004-09-07 가부시키가이샤 히타치세이사쿠쇼 Semiconductor device and semiconductor substrate
US7579229B2 (en) 1999-03-30 2009-08-25 Renesas Technology Corp. Semiconductor device and semiconductor substrate
US8304810B2 (en) 1999-03-30 2012-11-06 Renesas Electronics Corporation Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium
JP2015084427A (en) * 2014-11-24 2015-04-30 株式会社半導体エネルギー研究所 Semiconductor device

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