JPS5376769A - Simiconductor device - Google Patents
Simiconductor deviceInfo
- Publication number
- JPS5376769A JPS5376769A JP15193976A JP15193976A JPS5376769A JP S5376769 A JPS5376769 A JP S5376769A JP 15193976 A JP15193976 A JP 15193976A JP 15193976 A JP15193976 A JP 15193976A JP S5376769 A JPS5376769 A JP S5376769A
- Authority
- JP
- Japan
- Prior art keywords
- simiconductor
- simiconductor device
- directionon
- distortions
- designing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a MOS device of improved mobility by designing the channel directionon a Si layer of (110) face in a [001] direction and applying uniaxial tensile distortions to the element.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15193976A JPS5376769A (en) | 1976-12-20 | 1976-12-20 | Simiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15193976A JPS5376769A (en) | 1976-12-20 | 1976-12-20 | Simiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5376769A true JPS5376769A (en) | 1978-07-07 |
Family
ID=15529499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15193976A Pending JPS5376769A (en) | 1976-12-20 | 1976-12-20 | Simiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5376769A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58132975A (en) * | 1982-02-03 | 1983-08-08 | Hitachi Ltd | Semiconductor device and preparation thereof |
WO2000060671A1 (en) * | 1999-03-30 | 2000-10-12 | Hitachi, Ltd. | Semiconductor device and semiconductor substrate |
JP2015084427A (en) * | 2014-11-24 | 2015-04-30 | 株式会社半導体エネルギー研究所 | Semiconductor device |
-
1976
- 1976-12-20 JP JP15193976A patent/JPS5376769A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58132975A (en) * | 1982-02-03 | 1983-08-08 | Hitachi Ltd | Semiconductor device and preparation thereof |
WO2000060671A1 (en) * | 1999-03-30 | 2000-10-12 | Hitachi, Ltd. | Semiconductor device and semiconductor substrate |
JP2000286418A (en) * | 1999-03-30 | 2000-10-13 | Hitachi Ltd | Semiconductor device and semiconductor substrate |
KR100447492B1 (en) * | 1999-03-30 | 2004-09-07 | 가부시키가이샤 히타치세이사쿠쇼 | Semiconductor device and semiconductor substrate |
US7579229B2 (en) | 1999-03-30 | 2009-08-25 | Renesas Technology Corp. | Semiconductor device and semiconductor substrate |
US8304810B2 (en) | 1999-03-30 | 2012-11-06 | Renesas Electronics Corporation | Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium |
JP2015084427A (en) * | 2014-11-24 | 2015-04-30 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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