JPS5360587A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5360587A JPS5360587A JP13604676A JP13604676A JPS5360587A JP S5360587 A JPS5360587 A JP S5360587A JP 13604676 A JP13604676 A JP 13604676A JP 13604676 A JP13604676 A JP 13604676A JP S5360587 A JPS5360587 A JP S5360587A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- production
- semiconductor device
- over
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain wiring bodies whose resistance values do not change with heat treatment temperatures with good reproducibility by growing a polycrystalline Si layer having a high resistivity of 105 Ωcm or over on a substrate which is covered selectively with insulation films, depositing a transition metal film over this and forming a metal silicide layer through heat treatment at 400 to 600°C.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13604676A JPS6057227B2 (en) | 1976-11-11 | 1976-11-11 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13604676A JPS6057227B2 (en) | 1976-11-11 | 1976-11-11 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5360587A true JPS5360587A (en) | 1978-05-31 |
JPS6057227B2 JPS6057227B2 (en) | 1985-12-13 |
Family
ID=15165903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13604676A Expired JPS6057227B2 (en) | 1976-11-11 | 1976-11-11 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6057227B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772383A (en) * | 1980-08-27 | 1982-05-06 | Philips Nv | Method of fabricating semiconductor device |
JPS5975646A (en) * | 1982-10-25 | 1984-04-28 | Toshiba Corp | Manufacture of semiconductor device |
JPS6052044A (en) * | 1983-05-06 | 1985-03-23 | テキサス インスツルメンツ インコ−ポレイテツド | Method of forming metal silicide |
JPS6057646A (en) * | 1983-09-08 | 1985-04-03 | Seiko Epson Corp | Semiconductor device |
JPS60130844A (en) * | 1983-12-20 | 1985-07-12 | Toshiba Corp | Manufacture of semiconductor device |
JPH01138747A (en) * | 1981-08-03 | 1989-05-31 | Texas Instr Inc <Ti> | Polycrystalline semiconductor lateral diode |
-
1976
- 1976-11-11 JP JP13604676A patent/JPS6057227B2/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772383A (en) * | 1980-08-27 | 1982-05-06 | Philips Nv | Method of fabricating semiconductor device |
JPH01138747A (en) * | 1981-08-03 | 1989-05-31 | Texas Instr Inc <Ti> | Polycrystalline semiconductor lateral diode |
JPS5975646A (en) * | 1982-10-25 | 1984-04-28 | Toshiba Corp | Manufacture of semiconductor device |
JPS6052044A (en) * | 1983-05-06 | 1985-03-23 | テキサス インスツルメンツ インコ−ポレイテツド | Method of forming metal silicide |
JPH0365658B2 (en) * | 1983-05-06 | 1991-10-14 | ||
JPS6057646A (en) * | 1983-09-08 | 1985-04-03 | Seiko Epson Corp | Semiconductor device |
JPS60130844A (en) * | 1983-12-20 | 1985-07-12 | Toshiba Corp | Manufacture of semiconductor device |
JPH0564456B2 (en) * | 1983-12-20 | 1993-09-14 | Tokyo Shibaura Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6057227B2 (en) | 1985-12-13 |
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