JPS5338277A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5338277A
JPS5338277A JP11243476A JP11243476A JPS5338277A JP S5338277 A JPS5338277 A JP S5338277A JP 11243476 A JP11243476 A JP 11243476A JP 11243476 A JP11243476 A JP 11243476A JP S5338277 A JPS5338277 A JP S5338277A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
evaporated
readily
preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11243476A
Other languages
Japanese (ja)
Inventor
Yoshie Ohashi
Masatoshi Motojima
Shigeo Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11243476A priority Critical patent/JPS5338277A/en
Publication of JPS5338277A publication Critical patent/JPS5338277A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/48—Halides, with or without other cations besides aluminium
    • C01F7/56—Chlorides
    • C01F7/62—Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To readily and completely remove resist film by preventing a metal from being evaporated on the imperfectly shaped portion of 2 to 3 mm around wafer where the photoresist film material remains.
COPYRIGHT: (C)1978,JPO&Japio
JP11243476A 1976-09-21 1976-09-21 Production of semiconductor device Pending JPS5338277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11243476A JPS5338277A (en) 1976-09-21 1976-09-21 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11243476A JPS5338277A (en) 1976-09-21 1976-09-21 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5338277A true JPS5338277A (en) 1978-04-08

Family

ID=14586529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11243476A Pending JPS5338277A (en) 1976-09-21 1976-09-21 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5338277A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4237166A (en) * 1978-02-06 1980-12-02 Abbott Laboratories 1-Acryloyl-3-(substituted) phenyl ureas
JPS5649529A (en) * 1979-09-28 1981-05-06 Fujitsu Ltd Patterning method of doped layer
EP0227797A1 (en) * 1985-06-24 1987-07-08 Aluminum Company Of America Reduction of organohalogen compounds in metal and metalloid chloride production streams

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4237166A (en) * 1978-02-06 1980-12-02 Abbott Laboratories 1-Acryloyl-3-(substituted) phenyl ureas
JPS5649529A (en) * 1979-09-28 1981-05-06 Fujitsu Ltd Patterning method of doped layer
EP0227797A1 (en) * 1985-06-24 1987-07-08 Aluminum Company Of America Reduction of organohalogen compounds in metal and metalloid chloride production streams

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