JPS53141587A - Complementary field effect semiconductor device - Google Patents
Complementary field effect semiconductor deviceInfo
- Publication number
- JPS53141587A JPS53141587A JP5671677A JP5671677A JPS53141587A JP S53141587 A JPS53141587 A JP S53141587A JP 5671677 A JP5671677 A JP 5671677A JP 5671677 A JP5671677 A JP 5671677A JP S53141587 A JPS53141587 A JP S53141587A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- effect semiconductor
- complementary field
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007423 decrease Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease the change of the pull-down current caused by the change of the P-well surface concentration, by securing a serial connection between the P-well diffusion resistance element whose resistance decreases with increease of the P-well surface concentration and the drain-region of the N-channel FET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5671677A JPS53141587A (en) | 1977-05-16 | 1977-05-16 | Complementary field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5671677A JPS53141587A (en) | 1977-05-16 | 1977-05-16 | Complementary field effect semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53141587A true JPS53141587A (en) | 1978-12-09 |
JPS6259464B2 JPS6259464B2 (en) | 1987-12-11 |
Family
ID=13035198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5671677A Granted JPS53141587A (en) | 1977-05-16 | 1977-05-16 | Complementary field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53141587A (en) |
-
1977
- 1977-05-16 JP JP5671677A patent/JPS53141587A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6259464B2 (en) | 1987-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51135373A (en) | Semiconductor device | |
JPS5362985A (en) | Mis type field effect transistor and its production | |
JPS53141587A (en) | Complementary field effect semiconductor device | |
JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
JPS5387181A (en) | Complementary type mos transistor | |
JPS547889A (en) | Semiconductor memory element | |
JPS51140581A (en) | Semiconductor resistance element | |
JPS5291661A (en) | Semiconductor integrated circuit | |
JPS53100780A (en) | Complementary type mos transistor | |
JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
JPS5310229A (en) | Decoder circuit | |
DE3581842D1 (en) | INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS. | |
JPS5378783A (en) | Semiconductor device | |
JPS5432078A (en) | Semiconductor device | |
JPS5432084A (en) | Semiconductor device | |
JPS52112754A (en) | Mos transistor constant-voltage circuit | |
JPS53108394A (en) | Semiconductor intergrated circuit device | |
JPS53137677A (en) | Junction type field effect transistor and its manufacture | |
JPS53126280A (en) | Complementary type mis semiconductor device | |
JPS5384636A (en) | Sense amplifier circuit | |
JPS53101281A (en) | Semiconductor device | |
JPS5260057A (en) | Complementary mos inverter | |
JPS5226185A (en) | Semi-conductor unit | |
JPS5219978A (en) | Manufacture process for a semiconductor device | |
JPS53123039A (en) | Detection circuit for signal voltage |