JPS53141587A - Complementary field effect semiconductor device - Google Patents

Complementary field effect semiconductor device

Info

Publication number
JPS53141587A
JPS53141587A JP5671677A JP5671677A JPS53141587A JP S53141587 A JPS53141587 A JP S53141587A JP 5671677 A JP5671677 A JP 5671677A JP 5671677 A JP5671677 A JP 5671677A JP S53141587 A JPS53141587 A JP S53141587A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
effect semiconductor
complementary field
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5671677A
Other languages
Japanese (ja)
Other versions
JPS6259464B2 (en
Inventor
Mikio Bessho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5671677A priority Critical patent/JPS53141587A/en
Publication of JPS53141587A publication Critical patent/JPS53141587A/en
Publication of JPS6259464B2 publication Critical patent/JPS6259464B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the change of the pull-down current caused by the change of the P-well surface concentration, by securing a serial connection between the P-well diffusion resistance element whose resistance decreases with increease of the P-well surface concentration and the drain-region of the N-channel FET.
JP5671677A 1977-05-16 1977-05-16 Complementary field effect semiconductor device Granted JPS53141587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5671677A JPS53141587A (en) 1977-05-16 1977-05-16 Complementary field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5671677A JPS53141587A (en) 1977-05-16 1977-05-16 Complementary field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS53141587A true JPS53141587A (en) 1978-12-09
JPS6259464B2 JPS6259464B2 (en) 1987-12-11

Family

ID=13035198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5671677A Granted JPS53141587A (en) 1977-05-16 1977-05-16 Complementary field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS53141587A (en)

Also Published As

Publication number Publication date
JPS6259464B2 (en) 1987-12-11

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