JPS53101281A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53101281A JPS53101281A JP16027376A JP16027376A JPS53101281A JP S53101281 A JPS53101281 A JP S53101281A JP 16027376 A JP16027376 A JP 16027376A JP 16027376 A JP16027376 A JP 16027376A JP S53101281 A JPS53101281 A JP S53101281A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type
- channel
- substrate
- 000ωcm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To form the elements in a small area to enhance the degree of integration as well as to improve the electric characteristics, by using P-type or N-type Si substrate of more than 1,000Ωcm specific resistance and then forming P-channel and N-channel IGFET's onto the single substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16027376A JPS53101281A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16027376A JPS53101281A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53101281A true JPS53101281A (en) | 1978-09-04 |
Family
ID=15711420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16027376A Pending JPS53101281A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53101281A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172172A (en) * | 1995-12-21 | 1997-06-30 | Agency Of Ind Science & Technol | Field effect device and method and structure for operating it |
-
1976
- 1976-12-29 JP JP16027376A patent/JPS53101281A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172172A (en) * | 1995-12-21 | 1997-06-30 | Agency Of Ind Science & Technol | Field effect device and method and structure for operating it |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5230388A (en) | Semiconductor integrated circuit device constructed with insulating ga te field effect transistor | |
JPS51135373A (en) | Semiconductor device | |
JPS53101281A (en) | Semiconductor device | |
JPS5370768A (en) | Integrated circuit | |
JPS52112754A (en) | Mos transistor constant-voltage circuit | |
JPS5269278A (en) | Production of s#-gate type complementary mos semiconductor device | |
JPS53137677A (en) | Junction type field effect transistor and its manufacture | |
JPS52117584A (en) | Mos type semiconductor device | |
JPS53130987A (en) | Semiconductor device and its manufacture | |
JPS538072A (en) | Semiconductor device | |
JPS53112057A (en) | Production of semiconductor device | |
JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
JPS5373081A (en) | Manufacture of mis-type semiconductor device | |
JPS5384690A (en) | Field effect transistor | |
JPS52156583A (en) | Electrode formation method in semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS5298473A (en) | Thin film material | |
JPS5321582A (en) | Mos type semiconductor device | |
JPS535580A (en) | Field effect type semiconductor device | |
JPS52100875A (en) | Mos transistor | |
JPS51132985A (en) | Semiconductor device | |
JPS5338270A (en) | Semiconductor device | |
JPS5378783A (en) | Semiconductor device | |
JPS5363866A (en) | Production of semiconductor device | |
JPS53129980A (en) | Production of mos semiconductor device |