JPS53101281A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53101281A
JPS53101281A JP16027376A JP16027376A JPS53101281A JP S53101281 A JPS53101281 A JP S53101281A JP 16027376 A JP16027376 A JP 16027376A JP 16027376 A JP16027376 A JP 16027376A JP S53101281 A JPS53101281 A JP S53101281A
Authority
JP
Japan
Prior art keywords
semiconductor device
type
channel
substrate
000ωcm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16027376A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Motoo Nakano
Yasuo Kobayashi
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16027376A priority Critical patent/JPS53101281A/en
Publication of JPS53101281A publication Critical patent/JPS53101281A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To form the elements in a small area to enhance the degree of integration as well as to improve the electric characteristics, by using P-type or N-type Si substrate of more than 1,000Ωcm specific resistance and then forming P-channel and N-channel IGFET's onto the single substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP16027376A 1976-12-29 1976-12-29 Semiconductor device Pending JPS53101281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16027376A JPS53101281A (en) 1976-12-29 1976-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16027376A JPS53101281A (en) 1976-12-29 1976-12-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53101281A true JPS53101281A (en) 1978-09-04

Family

ID=15711420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16027376A Pending JPS53101281A (en) 1976-12-29 1976-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53101281A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172172A (en) * 1995-12-21 1997-06-30 Agency Of Ind Science & Technol Field effect device and method and structure for operating it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172172A (en) * 1995-12-21 1997-06-30 Agency Of Ind Science & Technol Field effect device and method and structure for operating it

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