JPS53118981A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53118981A JPS53118981A JP3332977A JP3332977A JPS53118981A JP S53118981 A JPS53118981 A JP S53118981A JP 3332977 A JP3332977 A JP 3332977A JP 3332977 A JP3332977 A JP 3332977A JP S53118981 A JPS53118981 A JP S53118981A
- Authority
- JP
- Japan
- Prior art keywords
- domain
- channel
- semiconductor device
- drain
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain the MOSFET less in the threshold voltage variation, by eliminating the short channel effect, through the provision of groove less than 1μm wide corssing the channel domain and cutting deeper than the bottom surface of the source domain or the drain domain, in the channel domain present between the source domain and the drain domain.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3332977A JPS53118981A (en) | 1977-03-28 | 1977-03-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3332977A JPS53118981A (en) | 1977-03-28 | 1977-03-28 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53118981A true JPS53118981A (en) | 1978-10-17 |
Family
ID=12383506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3332977A Pending JPS53118981A (en) | 1977-03-28 | 1977-03-28 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53118981A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US4874715A (en) * | 1987-05-20 | 1989-10-17 | Texas Instruments Incorporated | Read only memory with improved channel length control and method of forming |
US4979004A (en) * | 1988-01-29 | 1990-12-18 | Texas Instruments Incorporated | Floating gate memory cell and device |
US5045490A (en) * | 1990-01-23 | 1991-09-03 | Texas Instruments Incorporated | Method of making a pleated floating gate trench EPROM |
US5053839A (en) * | 1990-01-23 | 1991-10-01 | Texas Instruments Incorporated | Floating gate memory cell and device |
-
1977
- 1977-03-28 JP JP3332977A patent/JPS53118981A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US4874715A (en) * | 1987-05-20 | 1989-10-17 | Texas Instruments Incorporated | Read only memory with improved channel length control and method of forming |
US4979004A (en) * | 1988-01-29 | 1990-12-18 | Texas Instruments Incorporated | Floating gate memory cell and device |
US5045490A (en) * | 1990-01-23 | 1991-09-03 | Texas Instruments Incorporated | Method of making a pleated floating gate trench EPROM |
US5053839A (en) * | 1990-01-23 | 1991-10-01 | Texas Instruments Incorporated | Floating gate memory cell and device |
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