JPS53116068A - Insb polycrystal thin film of low noise - Google Patents
Insb polycrystal thin film of low noiseInfo
- Publication number
- JPS53116068A JPS53116068A JP3032877A JP3032877A JPS53116068A JP S53116068 A JPS53116068 A JP S53116068A JP 3032877 A JP3032877 A JP 3032877A JP 3032877 A JP3032877 A JP 3032877A JP S53116068 A JPS53116068 A JP S53116068A
- Authority
- JP
- Japan
- Prior art keywords
- insb
- thin film
- low noise
- polycrystal thin
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain InSb film of low noise, by containing the elements specified such as gold and silver with the concentration of about 5 × 1016 to 1 × 1018 cm-3 in total in the InSb polycrystal thin film having the band melting of 0,1 to 3 μm.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3032877A JPS53116068A (en) | 1977-03-22 | 1977-03-22 | Insb polycrystal thin film of low noise |
US05/888,465 US4177298A (en) | 1977-03-22 | 1978-03-20 | Method for producing an InSb thin film element |
DE2812656A DE2812656C2 (en) | 1977-03-22 | 1978-03-22 | Process for the production of an InSb thin-film component |
NLAANVRAGE7803102,A NL178377C (en) | 1977-03-22 | 1978-03-22 | METHOD FOR MANUFACTURING A THIN INDIUM ANTIMONIDE FILM ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3032877A JPS53116068A (en) | 1977-03-22 | 1977-03-22 | Insb polycrystal thin film of low noise |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53116068A true JPS53116068A (en) | 1978-10-11 |
JPS6228568B2 JPS6228568B2 (en) | 1987-06-22 |
Family
ID=12300731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3032877A Granted JPS53116068A (en) | 1977-03-22 | 1977-03-22 | Insb polycrystal thin film of low noise |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53116068A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213485A (en) * | 1982-06-04 | 1983-12-12 | Hitachi Ltd | Manufacture of magnetoresistance effect element |
JPH02106080A (en) * | 1988-10-14 | 1990-04-18 | Agency Of Ind Science & Technol | Recrystallized film for hall effect element and manufacture thereof |
-
1977
- 1977-03-22 JP JP3032877A patent/JPS53116068A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213485A (en) * | 1982-06-04 | 1983-12-12 | Hitachi Ltd | Manufacture of magnetoresistance effect element |
JPH0462191B2 (en) * | 1982-06-04 | 1992-10-05 | Hitachi Ltd | |
JPH02106080A (en) * | 1988-10-14 | 1990-04-18 | Agency Of Ind Science & Technol | Recrystallized film for hall effect element and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6228568B2 (en) | 1987-06-22 |
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