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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP4857176ApriorityCriticalpatent/JPS52132787A/en
Publication of JPS52132787ApublicationCriticalpatent/JPS52132787A/en
PURPOSE: To enable sufficient S/N ratio, by constituting the hall element so that the length of crystal grain is in excess of 25μm and by making microzone melt process to GaxIn1-xSb mixed crystal film.