JPS5299791A - Intergrated circuit - Google Patents

Intergrated circuit

Info

Publication number
JPS5299791A
JPS5299791A JP1670376A JP1670376A JPS5299791A JP S5299791 A JPS5299791 A JP S5299791A JP 1670376 A JP1670376 A JP 1670376A JP 1670376 A JP1670376 A JP 1670376A JP S5299791 A JPS5299791 A JP S5299791A
Authority
JP
Japan
Prior art keywords
intergrated circuit
elements
fineness
integration
scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1670376A
Other languages
Japanese (ja)
Other versions
JPS5838939B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51016703A priority Critical patent/JPS5838939B2/en
Publication of JPS5299791A publication Critical patent/JPS5299791A/en
Publication of JPS5838939B2 publication Critical patent/JPS5838939B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To increase the scale of integration and fineness by forming elements as specified, removing the reverse conductivity type region on the side of the capacity element making transistor operation and realizing memory effect with three elements.
JP51016703A 1976-02-18 1976-02-18 integrated circuit Expired JPS5838939B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51016703A JPS5838939B2 (en) 1976-02-18 1976-02-18 integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51016703A JPS5838939B2 (en) 1976-02-18 1976-02-18 integrated circuit

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP58025683A Division JPS58155754A (en) 1983-02-18 1983-02-18 Integrated circuit memory
JP58025684A Division JPS58155755A (en) 1983-02-18 1983-02-18 Integrated circuit memory
JP58025682A Division JPS58169960A (en) 1983-02-18 1983-02-18 Integrated circuit containing capacity element

Publications (2)

Publication Number Publication Date
JPS5299791A true JPS5299791A (en) 1977-08-22
JPS5838939B2 JPS5838939B2 (en) 1983-08-26

Family

ID=11923632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51016703A Expired JPS5838939B2 (en) 1976-02-18 1976-02-18 integrated circuit

Country Status (1)

Country Link
JP (1) JPS5838939B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5447488A (en) * 1977-09-21 1979-04-14 Hitachi Ltd Production of silicon gate type mis semiconductor device
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS5911665A (en) * 1982-07-12 1984-01-21 Nec Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU663640B2 (en) * 1993-02-22 1995-10-12 Illinois Tool Works Inc. Membrane switch

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5447488A (en) * 1977-09-21 1979-04-14 Hitachi Ltd Production of silicon gate type mis semiconductor device
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS5911665A (en) * 1982-07-12 1984-01-21 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5838939B2 (en) 1983-08-26

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