JPS5291655A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5291655A JPS5291655A JP797376A JP797376A JPS5291655A JP S5291655 A JPS5291655 A JP S5291655A JP 797376 A JP797376 A JP 797376A JP 797376 A JP797376 A JP 797376A JP S5291655 A JPS5291655 A JP S5291655A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- noise
- diffusing
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce 1/f noise and pulse noise by preparing an N type semiconductor layer which constitutes a substantially non-diffusing PN junction in a P type diffusion region on an N type semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP797376A JPS5291655A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
GB5140576A GB1572703A (en) | 1975-12-10 | 1976-12-09 | Semiconductor device and method of producing a semiconductor device |
DE19762656158 DE2656158A1 (en) | 1975-12-10 | 1976-12-10 | SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING IT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP797376A JPS5291655A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5291655A true JPS5291655A (en) | 1977-08-02 |
Family
ID=11680392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP797376A Pending JPS5291655A (en) | 1975-12-10 | 1976-01-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5291655A (en) |
-
1976
- 1976-01-29 JP JP797376A patent/JPS5291655A/en active Pending
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