JPS5284985A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5284985A JPS5284985A JP113276A JP113276A JPS5284985A JP S5284985 A JPS5284985 A JP S5284985A JP 113276 A JP113276 A JP 113276A JP 113276 A JP113276 A JP 113276A JP S5284985 A JPS5284985 A JP S5284985A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- ics
- prevented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:Thermal breakdown in ICs is prevented by providing an abnormal current preventing resistor on both or either one of the power supply and ground sides in order to avoid flowing of forward current from the output part to the diffusion layer composing an inverter circuit with P and N channel MOS transistors of a C-MOS structure.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP113276A JPS5284985A (en) | 1976-01-08 | 1976-01-08 | Semiconductor integrated circuit device |
GB2976276A GB1558606A (en) | 1975-07-18 | 1976-07-16 | Semiconductor integrated circuit device |
US05/911,164 US4209713A (en) | 1975-07-18 | 1978-05-31 | Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP113276A JPS5284985A (en) | 1976-01-08 | 1976-01-08 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5284985A true JPS5284985A (en) | 1977-07-14 |
JPS618587B2 JPS618587B2 (en) | 1986-03-15 |
Family
ID=11492907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP113276A Granted JPS5284985A (en) | 1975-07-18 | 1976-01-08 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5284985A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01262656A (en) * | 1988-04-14 | 1989-10-19 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
-
1976
- 1976-01-08 JP JP113276A patent/JPS5284985A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01262656A (en) * | 1988-04-14 | 1989-10-19 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS618587B2 (en) | 1986-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5598872A (en) | Semiconductor device | |
JPS5310984A (en) | Complementary type mos integrated circuit | |
JPS5376679A (en) | Semiconductor device | |
JPS56110251A (en) | High withsand voltage semiconductor device | |
JPS5284985A (en) | Semiconductor integrated circuit device | |
JPS5366178A (en) | Input protecting circuit | |
JPS6447077A (en) | Protective circuit for power mos field-effect transistor | |
JPS5450277A (en) | Semiconductor device | |
JPS56164568A (en) | Semiconductor device | |
JPS5333071A (en) | Complementary type insulated gate semiconductor circuit | |
JPS57147278A (en) | Protecting device for mis integrated circuit | |
JPS5458374A (en) | Complementary mis ic | |
JPS5588372A (en) | Lateral type transistor | |
JPS5491067A (en) | Input protective circuit | |
JPS5565470A (en) | Mos integrated circuit | |
JPS6411359A (en) | Integrated circuit device | |
JPS5457881A (en) | Semiconductor device | |
JPS57103356A (en) | Mos semiconductor device | |
JPS5466785A (en) | Semiconductor integrated circuit device | |
JPS54147768A (en) | Protection circuit for ic | |
JPS6432666A (en) | Surge protective integrated circuit | |
JPS52152181A (en) | Semiconductor integrated circuit device and its production | |
JPS52107554A (en) | Constant current source circuit | |
GB1457586A (en) | Integrated circuits | |
JPS57206061A (en) | Semiconductor integrated circuit |