JPS5284985A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5284985A
JPS5284985A JP113276A JP113276A JPS5284985A JP S5284985 A JPS5284985 A JP S5284985A JP 113276 A JP113276 A JP 113276A JP 113276 A JP113276 A JP 113276A JP S5284985 A JPS5284985 A JP S5284985A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
ics
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP113276A
Other languages
Japanese (ja)
Other versions
JPS618587B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP113276A priority Critical patent/JPS5284985A/en
Priority to GB2976276A priority patent/GB1558606A/en
Publication of JPS5284985A publication Critical patent/JPS5284985A/en
Priority to US05/911,164 priority patent/US4209713A/en
Publication of JPS618587B2 publication Critical patent/JPS618587B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:Thermal breakdown in ICs is prevented by providing an abnormal current preventing resistor on both or either one of the power supply and ground sides in order to avoid flowing of forward current from the output part to the diffusion layer composing an inverter circuit with P and N channel MOS transistors of a C-MOS structure.
JP113276A 1975-07-18 1976-01-08 Semiconductor integrated circuit device Granted JPS5284985A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP113276A JPS5284985A (en) 1976-01-08 1976-01-08 Semiconductor integrated circuit device
GB2976276A GB1558606A (en) 1975-07-18 1976-07-16 Semiconductor integrated circuit device
US05/911,164 US4209713A (en) 1975-07-18 1978-05-31 Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP113276A JPS5284985A (en) 1976-01-08 1976-01-08 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5284985A true JPS5284985A (en) 1977-07-14
JPS618587B2 JPS618587B2 (en) 1986-03-15

Family

ID=11492907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP113276A Granted JPS5284985A (en) 1975-07-18 1976-01-08 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5284985A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262656A (en) * 1988-04-14 1989-10-19 Fuji Electric Co Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262656A (en) * 1988-04-14 1989-10-19 Fuji Electric Co Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS618587B2 (en) 1986-03-15

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